APT8011JLL

MOSFET N-CH 800V 51A SOT-227

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APT8011JLL Picture
SeekIC No. : 004131010 Detail

APT8011JLL: MOSFET N-CH 800V 51A SOT-227

floor Price/Ceiling Price

US $ 32.42~44.58 / Piece | Get Latest Price
Part Number:
APT8011JLL
Mfg:
Supply Ability:
5000

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Upload time: 2024/12/21

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Product Details

Quick Details

Series: POWER MOS 7® Manufacturer: Microsemi Power Products Group
FET Type: MOSFET N-Channel, Metal Oxide FET Feature: Standard
Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25° C: 51A
Rds On (Max) @ Id, Vgs: 110 mOhm @ 25.5A, 10V Interface Type : Ethernet, I2C, SPI, UART, USB
Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) @ Vgs: 650nC @ 10V
Input Capacitance (Ciss) @ Vds: 9480pF @ 25V Power - Max: 694W
Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: ISOTOP?    

Description

FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Manufacturer: Microsemi Power Products Group
Current - Continuous Drain (Id) @ 25° C: 51A
Supplier Device Package: ISOTOP?
Series: POWER MOS 7®
Drain to Source Voltage (Vdss): 800V
Vgs(th) (Max) @ Id: 5V @ 5mA
Power - Max: 694W
Rds On (Max) @ Id, Vgs: 110 mOhm @ 25.5A, 10V
Gate Charge (Qg) @ Vgs: 650nC @ 10V
Input Capacitance (Ciss) @ Vds: 9480pF @ 25V


Features:

• Lower Input Capacitance
• Increased Power Dissipation
• Lower Miller Capacitance
• Easier To Drive
• Lower Gate Charge, Qg
• Popular SOT-227 Package



Specifications

Symbol
Parameter
APT8043
UNIT
VDSS
Drain-Source Voltage
800
Volts
ID
Continuous Drain Current @ TC = 25°C
51
Amps
IDM
Pulsed Drain Current
204
VGS
Gate-Source Voltage Continuous
±30
Volts
VGSM
Gate-Source Voltage Transient
±40
PD
Total Power Dissipation @ TC = 25°C
690
Watts
Linear Derating Factor
5.52
W/°C
TJ,TSTG
Operating and Storage Junction Temperature Range
-55 to 150
°C
TL
Lead Temperature: 0.063" from Case for 10 Sec.
300
IAR
Avalanche Current (Repetitive and Non-Repetitive)
51
Amps
EAR
Repetitive Avalanche Energy
50
mJ
EAS
Single Pulse Avalanche Energy
3600



Description

Power MOS 7TM APT8011JLL is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.


Parameters:

Technical/Catalog InformationAPT8011JLL
VendorMicrosemi-PPG
CategoryDiscrete Semiconductor Products
Mounting TypeChassis Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25° C51A
Rds On (Max) @ Id, Vgs110 mOhm @ 25.5A, 10V
Input Capacitance (Ciss) @ Vds 9480pF @ 25V
Power - Max694W
PackagingTube
Gate Charge (Qg) @ Vgs650nC @ 10V
Package / CaseSOT-227
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names APT8011JLL
APT8011JLL



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