MOSFET N-CH 800V 42A SOT-227
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Series: | POWER MOS 7® | Manufacturer: | Microsemi Power Products Group |
FET Type: | MOSFET N-Channel, Metal Oxide | FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 800V | Current - Continuous Drain (Id) @ 25° C: | 42A |
Interface Type : | Ethernet, I2C, SPI, UART, USB | Rds On (Max) @ Id, Vgs: | 140 mOhm @ 21A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 5mA | Gate Charge (Qg) @ Vgs: | 285nC @ 10V |
Input Capacitance (Ciss) @ Vds: | 7238pF @ 25V | Power - Max: | 595W |
Mounting Type: | Chassis Mount | Package / Case: | SOT-227-4, miniBLOC |
Supplier Device Package: | ISOTOP? |
Symbol |
Parameter |
APT8043 |
UNIT |
VDSS |
Drain-Source Voltage |
800
|
Volts |
ID |
Continuous Drain Current @ TC = 25°C |
42 |
Amps
|
IDM |
Pulsed Drain Current |
168 |
|
VGS |
Gate-Source Voltage Continuous |
±30 |
Volts |
VGSM |
Gate-Source Voltage Transient |
±40 | |
PD |
Total Power Dissipation @ TC = 25°C |
595 |
Watts |
Linear Derating Factor |
4.76 |
W/°C | |
TJ,TSTG |
Operating and Storage Junction Temperature Range |
-55 to 150 |
°C |
TL |
Lead Temperature: 0.063" from Case for 10 Sec. |
300 | |
IAR |
Avalanche Current (Repetitive and Non-Repetitive) |
42 |
Amps |
EAR |
Repetitive Avalanche Energy |
50 |
mJ |
EAS |
Single Pulse Avalanche Energy |
3200 |
Technical/Catalog Information | APT8014JLL |
Vendor | Microsemi-PPG |
Category | Discrete Semiconductor Products |
Mounting Type | Chassis Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 800V |
Current - Continuous Drain (Id) @ 25° C | 42A |
Rds On (Max) @ Id, Vgs | 140 mOhm @ 21A, 10V |
Input Capacitance (Ciss) @ Vds | 7238pF @ 25V |
Power - Max | 595W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 285nC @ 10V |
Package / Case | SOT-227 |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | APT8014JLL APT8014JLL |