APT8014JLL

MOSFET N-CH 800V 42A SOT-227

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SeekIC No. : 004131012 Detail

APT8014JLL: MOSFET N-CH 800V 42A SOT-227

floor Price/Ceiling Price

Part Number:
APT8014JLL
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/7

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Product Details

Quick Details

Series: POWER MOS 7® Manufacturer: Microsemi Power Products Group
FET Type: MOSFET N-Channel, Metal Oxide FET Feature: Standard
Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25° C: 42A
Interface Type : Ethernet, I2C, SPI, UART, USB Rds On (Max) @ Id, Vgs: 140 mOhm @ 21A, 10V
Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) @ Vgs: 285nC @ 10V
Input Capacitance (Ciss) @ Vds: 7238pF @ 25V Power - Max: 595W
Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: ISOTOP?    

Description

FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Manufacturer: Microsemi Power Products Group
Supplier Device Package: ISOTOP?
Series: POWER MOS 7®
Current - Continuous Drain (Id) @ 25° C: 42A
Drain to Source Voltage (Vdss): 800V
Vgs(th) (Max) @ Id: 5V @ 5mA
Power - Max: 595W
Gate Charge (Qg) @ Vgs: 285nC @ 10V
Input Capacitance (Ciss) @ Vds: 7238pF @ 25V
Rds On (Max) @ Id, Vgs: 140 mOhm @ 21A, 10V


Features:

• Lower Input Capacitance
• Increased Power Dissipation
• Lower Miller Capacitance
• Easier To Drive
• Lower Gate Charge, Qg
• Popular SOT-227 Package



Specifications

Symbol
Parameter
APT8043
UNIT
VDSS
Drain-Source Voltage
800
Volts
ID
Continuous Drain Current @ TC = 25°C
42
Amps
IDM
Pulsed Drain Current
168
VGS
Gate-Source Voltage Continuous
±30
Volts
VGSM
Gate-Source Voltage Transient
±40
PD
Total Power Dissipation @ TC = 25°C
595
Watts
Linear Derating Factor
4.76
W/°C
TJ,TSTG
Operating and Storage Junction Temperature Range
-55 to 150
°C
TL
Lead Temperature: 0.063" from Case for 10 Sec.
300
IAR
Avalanche Current (Repetitive and Non-Repetitive)
42
Amps
EAR
Repetitive Avalanche Energy
50
mJ
EAS
Single Pulse Avalanche Energy
3200



Description

Power MOS 7TM APT8014JLL is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.


Parameters:

Technical/Catalog InformationAPT8014JLL
VendorMicrosemi-PPG
CategoryDiscrete Semiconductor Products
Mounting TypeChassis Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25° C42A
Rds On (Max) @ Id, Vgs140 mOhm @ 21A, 10V
Input Capacitance (Ciss) @ Vds 7238pF @ 25V
Power - Max595W
PackagingTube
Gate Charge (Qg) @ Vgs285nC @ 10V
Package / CaseSOT-227
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names APT8014JLL
APT8014JLL



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