APT8065BVRG, US $ 7.04-7.04, APT8065BVRG DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 003430367 Detail

APT8065BVRG: MOSFET N-CH 800V 13A TO-247

APT8065BVRG Data Sheet

US $ 7.04~7.04 / Piece | Get Latest Price

Part Number:: APT8065BVRG
Mfg:
Supply Ability:: 5000

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Upload time: 2024/11/7

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Product Details

Quick Details

Series:	POWER MOS V®	Manufacturer:	Microsemi Power Products Group
FET Type:	MOSFET N-Channel, Metal Oxide	Transistor Type:	-
Gain :	19.5 dB	Current - Collector (Ic) (Max):	-
FET Feature:	Standard	Drain to Source Voltage (Vdss):	800V
Voltage - Collector Emitter Breakdown (Max):	-	Current - Continuous Drain (Id) @ 25° C:	13A
Vce Saturation (Max) @ Ib, Ic:	-	Current - Collector Cutoff (Max):	-
Rds On (Max) @ Id, Vgs:	650 mOhm @ 500mA, 10V	DC Current Gain (hFE) (Min) @ Ic, Vce:	-
Vgs(th) (Max) @ Id:	4V @ 1mA	Gate Charge (Qg) @ Vgs:	225nC @ 10V
Frequency - Transition:	-	Input Capacitance (Ciss) @ Vds:	3700pF @ 25V
Power - Max:	280W	Mounting Type:	Through Hole
Package / Case:	TO-247-3	Supplier Device Package:	TO-247 [B]

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 13A
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-247-3
Drain to Source Voltage (Vdss): 800V
Power - Max: 280W
Vgs(th) (Max) @ Id: 4V @ 1mA
Input Capacitance (Ciss) @ Vds: 3700pF @ 25V
Manufacturer: Microsemi Power Products Group
Supplier Device Package: TO-247 [B]
Series: POWER MOS V®
Rds On (Max) @ Id, Vgs: 650 mOhm @ 500mA, 10V
Gate Charge (Qg) @ Vgs: 225nC @ 10V

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APT8065BVRG

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