APT8043BFLL

Features:

• Lower Input Capacitance
• Increased Power Dissipation
• Lower Miller Capacitance
• Easier To Drive
• Lower Gate Charge, Qg
• TO-247 or Surface Mount D³PAK Package


Specifications

Symbol	Parameter	APT8043	UNIT
VDSS	Drain-Source Voltage	800	Volts
ID	Continuous Drain Current @ TC = 25°C	20	Amps
IDM	Pulsed Drain Current	80
VGS	Gate-Source Voltage Continuous	±30	Volts
VGSM	Gate-Source Voltage Transient	±40
PD	Total Power Dissipation @ TC = 25°C	400	Watts
	Linear Derating Factor	3.20	W/°C
TJ,TSTG	Operating and Storage Junction Temperature Range	-55 to 150	°C
TL	Lead Temperature: 0.063" from Case for 10 Sec.	300
IAR	Avalanche Current (Repetitive and Non-Repetitive)	20	Amps
EAR	Repetitive Avalanche Energy	30	mJ
EAS	Single Pulse Avalanche Energy	1300

Description

Power MOS 7^TM APT8043BFLL is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7^TM by significantly lowering R_DS(ON) and Q_g. Power MOS 7^TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.