APT8030LVR Selling Leads, Price trend, APT8030LVR DataSheet download, circuit diagram from SeekIC.com

Features: • Faster Switching • 100% Avalanche Tested• Lower Leakage • Popular TO-264 PackageSpecifications Symbol Parameter APT8043 UNIT VDSS Drain-Source Voltage 800 Volts ID Continuous Drain Current @ TC = 25°C 27 Amps ID...

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SeekIC No. : 004287550 Detail

APT8030LVR: Features: • Faster Switching • 100% Avalanche Tested• Lower Leakage • Popular TO-264 PackageSpecifications Symbol Parameter APT8043 UNIT VDSS Drain-So...

APT8030LVR Data Sheet

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Part Number:: APT8030LVR
Supply Ability:: 5000

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Upload time: 2024/12/21

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Product Details

Description

Features:

• Faster Switching
• 100% Avalanche Tested
• Lower Leakage
• Popular TO-264 Package

Specifications

Symbol	Parameter	APT8043	UNIT
V_DSS	Drain-Source Voltage	800	Volts
I_D	Continuous Drain Current @ T_C = 25°C	27	Amps
I_DM	Pulsed Drain Current	108	Amps
V_GS	Gate-Source Voltage Continuous	±30	Volts
V_GSM	Gate-Source Voltage Transient	±40	Volts
P_D	Total Power Dissipation @ T_C = 25°C	520	Watts
P_D	Linear Derating Factor	4.16	W/°C
T_J,T_STG	Operating and Storage Junction Temperature Range	-55 to 150	°C
T_L	Lead Temperature: 0.063" from Case for 10 Sec.	300	°C
I_AR	Avalanche Current (Repetitive and Non-Repetitive)	27	Amps
E_AR	Repetitive Avalanche Energy	50	mJ
E_AS	Single Pulse Avalanche Energy	2500	mJ

Description

Power MOS V^® APT8030LVR is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V^®also achieves faster switching speeds through optimized gate layout.

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APT8030LVR

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