APT8030JVFR

FET Type: MOSFET N-Channel, Metal Oxide
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Manufacturer: Microsemi Power Products Group
Supplier Device Package: ISOTOP?
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Drain to Source Voltage (Vdss): 800V
Series: POWER MOS V®
Power - Max: 450W
Current - Continuous Drain (Id) @ 25° C: 25A
FET Feature: Logic Level Gate
Rds On (Max) @ Id, Vgs: 300 mOhm @ 500mA, 10V
Gate Charge (Qg) @ Vgs: 510nC @ 10V
Input Capacitance (Ciss) @ Vds: 7900pF @ 25V


Features:

• Fast Recovery Body Diode
• 100% Avalanche Tested
• Lower Leakage
• Popular SOT-227 Package
• Faster Switching


Specifications

Symbol	Parameter	APT30M40JVR	UNIT
VDSS	Drain-Source Voltage	800	Volts
ID	Continuous Drain Current @ TC = 25°C	25	Amps
IDM	Pulsed Drain Current	100
VGS	Gate-Source Voltage Continuous	±30	Volts
VGSM	Gate-Source Voltage Transient	±40
PD	Total Power Dissipation @ TC = 25°C	450	Watts
	Linear Derating Factor	3.6	W/°C
TJ,TSTG	Operating and Storage Junction Temperature Range	-55 to 150
TL	Lead Temperature: 0.063" from Case for 10 Sec.	300
IAR	Avalanche Current (Repetitive and Non-Repetitive)	25	Amps
EAR	Repetitive Avalanche Energy	50	mJ
EAS	Single Pulse Avalanche Energy	2500

Description

Power MOS V^® APT8030JVFR is a new generation of high voltage N-Channel enhancement ode power MOSFETs. This new technology minimizes the JFET effect, ncreases packing density and reduces the on-resistance. Power MOS V^® lso achieves faster switching speeds through optimized gate layout.