DescriptionThe features of AS29LV800B2VFR are: (1)fast recovery body diode; (2)100% avalanche tested; (3)lower leakage; (4)new T-MAX package; (5)faster switching. The following is about the maximum ratings of AS29LV800B2VFR: (1)Drain-Source Voltage: 800 Volts ; (2)Continuous Drain Current @ TC = ...
APT8030: DescriptionThe features of AS29LV800B2VFR are: (1)fast recovery body diode; (2)100% avalanche tested; (3)lower leakage; (4)new T-MAX package; (5)faster switching. The following is about the maximum...
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The features of AS29LV800B2VFR are: (1)fast recovery body diode; (2)100% avalanche tested; (3)lower leakage; (4)new T-MAX package; (5)faster switching.
The following is about the maximum ratings of AS29LV800B2VFR: (1)Drain-Source Voltage: 800 Volts ; (2)Continuous Drain Current @ TC = 25°C: 27 Amps ; (3)Pulsed Drain Current : 108 Amps; (4)Gate-Source Voltage Continuous: ±30 Volts ; (5)Gate-Source Voltage Transient: ±40 ; (6)Total Power Dissipation @ TC = 25°C: 520 Watts ; (7)Linear Derating Factor: 4.16 W/°C ; (8)Operating and Storage Junction Temperature Range: -55to150 °C ; (9)Lead Temperature: 0.063" from Case for 10 Sec: 300 ; (10)Avalanche Current (Repetitive and Non-Repetitive): 27 Amps ; (11)Repetitive Avalanche Energy : 50 mJ ; (12)Single Pulse Avalanche Energy : 2500 mJ.
The electrical characteristics of the AS29LV800B2VFR are: (1)input capacitance: 6600pF typical and 7900pF max; (2)output capacitance: 645pF typical and 900pF max; (3)reverse transfer capacitance: 320pF typical and 480pF max; (4)total gate charge: 340nC typical and 510nC max; (5)gate-source charge: 31nC typical and 47nC max; (6)turn-on delay time: 16ns typical and 32ns max; (7)rise time: 15ns typical and 28ns max.