APT8028JVR

Features: • Faster Switching • 100% Avalanche Tested• Lower Leakage • Popular SOT-227 PackageSpecifications Symbol Parameter APT8043 UNIT VDSS Drain-Source Voltage 800 Volts ID Continuous Drain Current @ TC = 25°C 28 Amps I...

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SeekIC No. : 004287544 Detail

APT8028JVR: Features: • Faster Switching • 100% Avalanche Tested• Lower Leakage • Popular SOT-227 PackageSpecifications Symbol Parameter APT8043 UNIT VDSS Drain-S...

floor Price/Ceiling Price

Part Number:
APT8028JVR
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/12/21

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Product Details

Description



Features:

• Faster Switching
• 100% Avalanche Tested
• Lower Leakage
• Popular SOT-227 Package



Specifications

Symbol
Parameter
APT8043
UNIT
VDSS
Drain-Source Voltage
800
Volts
ID
Continuous Drain Current @ TC = 25°C
28
Amps
IDM
Pulsed Drain Current
112
VGS
Gate-Source Voltage Continuous
±30
Volts
VGSM
Gate-Source Voltage Transient
±40
PD
Total Power Dissipation @ TC = 25°C
500
Watts
Linear Derating Factor
4
W/°C
TJ,TSTG
Operating and Storage Junction Temperature Range
-55 to 150
°C
TL
Lead Temperature: 0.063" from Case for 10 Sec.
300
IAR
Avalanche Current (Repetitive and Non-Repetitive)
16
Amps
EAR
Repetitive Avalanche Energy
30
mJ
EAS
Single Pulse Avalanche Energy
1300



Description

Power MOS V® APT8028JVR is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.


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