APT8024JFLL

FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Manufacturer: Microsemi Power Products Group
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP?
Power - Max: 460W
Series: POWER MOS 7®
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25° C: 29A
Rds On (Max) @ Id, Vgs: 260 mOhm @ 14.5A, 10V
Gate Charge (Qg) @ Vgs: 160nC @ 10V
Input Capacitance (Ciss) @ Vds: 4670pF @ 25V


Features:

• Lower Input Capacitance
• Increased Power Dissipation
• Lower Miller Capacitance
• Easier To Drive
• Lower Gate Charge, Qg
• Popular SOT-227 Package


Specifications

All Ratings: TC = 25°C unless otherwise specified.

Symbol	Parameter	APT5010JFLL	UNIT
VDSS	Drain-Source Voltage	800	Volts
ID	Continuous Drain Current @ TC = 25°C	29	Amps
IDM	Pulsed Drain Current	116
VGS	Gate-Source Voltage Continuous	±30	Volts
VGSM	Gate-Source Voltage Transient	±40
PD	Total Power Dissipation @ TC = 25°C	460	Watts
	Linear Derating Factor	3.68	W/°C
TJ,TSTG	Operating and Storage Junction Temperature Range	-55 to 150	°C
TL	Lead Temperature: 0.063" from Case for 10 Sec.	300
IAR	Avalanche Current (Repetitve and Non-Repetitive)	29	Amps
EAR	Repetitive Avalanche Energy	50	mJ
EAS	Single Pulse Avalanche Energy	2500

Description

Power MOS 7^TM APT8024JFLL is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7^TM by significantly lowering RDS(ON) and Qg. Power MOS 7^TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.