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APT8020B2LLG

MOSFET N-CH 800V 38A T-MAX

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SeekIC No. : 003430503 Detail

APT8020B2LLG: MOSFET N-CH 800V 38A T-MAX

APT8020B2LLG Data Sheet

floor Price/Ceiling Price

US $ 11.29~18.81 / Piece | Get Latest Price
Part Number:
APT8020B2LLG
Mfg:
Supply Ability:
5000

Price Break

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  • 10~100
  • 100~250
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  • Unit Price
  • $18.81
  • $17.4
  • $14.81
  • $13.64
  • $12.93
  • $12.23
  • $11.85
  • $11.52
  • $11.29
  • Processing time
  • 15 Days
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Product Details

Quick Details

Series: POWER MOS 7® Manufacturer: Microsemi Power Products Group
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 800V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 38A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 200 mOhm @ 19A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) @ Vgs: 195nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 5200pF @ 25V
Power - Max: 694W Mounting Type: Through Hole
Package / Case: TO-247-3 Variant Supplier Device Package: T-MAX? [B2]    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Gate Charge (Qg) @ Vgs: 195nC @ 10V
Packaging: Tube
Mounting Type: Through Hole
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25° C: 38A
Input Capacitance (Ciss) @ Vds: 5200pF @ 25V
Manufacturer: Microsemi Power Products Group
Power - Max: 694W
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Package / Case: TO-247-3 Variant
Supplier Device Package: T-MAX? [B2]
Series: POWER MOS 7®
Rds On (Max) @ Id, Vgs: 200 mOhm @ 19A, 10V


Parameters:

Technical/Catalog InformationAPT8020B2LLG
VendorMicrosemi-PPG
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25° C38A
Rds On (Max) @ Id, Vgs200 mOhm @ 19A, 10V
Input Capacitance (Ciss) @ Vds 5200pF @ 25V
Power - Max694W
PackagingTube
Gate Charge (Qg) @ Vgs195nC @ 10V
Package / CaseT-MAX
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names APT8020B2LLG
APT8020B2LLG



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