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APT8018L2VR

Features: • TO-264 MAX Package • Faster Switching• Lower Leakage• 100% Avalanche TestedSpecifications Symbol Parameter APT8043 UNIT VDSS Drain-Source Voltage 800 Volts ID Continuous Drain Current @ TC = 25°C 43 Amps IDM ...

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SeekIC No. : 004287531 Detail

APT8018L2VR: Features: • TO-264 MAX Package • Faster Switching• Lower Leakage• 100% Avalanche TestedSpecifications Symbol Parameter APT8043 UNIT VDSS Drain-Source ...

APT8018L2VR Data Sheet

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Part Number:
APT8018L2VR
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/31

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Product Details

Description



Features:

• TO-264 MAX Package
• Faster Switching
• Lower Leakage
• 100% Avalanche Tested


Specifications

Symbol
Parameter
APT8043
UNIT
VDSS
Drain-Source Voltage
800
Volts
ID
 Continuous Drain Current @ TC = 25°C
43
Amps
IDM
Pulsed Drain Current
172
VGS
 Gate-Source Voltage Continuous
±30
Volts
VGSM
 Gate-Source Voltage Transient
±40
PD
 Total Power Dissipation @ TC = 25°C
830
Watts
Linear Derating Factor
6.64
W/°C
TJ,TSTG
 Operating and Storage Junction Temperature Range
-55 to 150
°C
TL
 Lead Temperature: 0.063" from Case for 10 Sec.
300
IAR
 Avalanche Current (Repetitive and Non-Repetitive)
43
Amps
EAR
 Repetitive Avalanche Energy
50
mJ
EAS
Single Pulse Avalanche Energy
3200



Description

Power MOS V® APT8018L2VR is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.


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