APT8015JVFR

MOSFET N-CH 800V 44A SOT-227

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SeekIC No. : 004131013 Detail

APT8015JVFR: MOSFET N-CH 800V 44A SOT-227

floor Price/Ceiling Price

US $ 38.59~38.59 / Piece | Get Latest Price
Part Number:
APT8015JVFR
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~10
  • Unit Price
  • $38.59
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/7

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Product Details

Quick Details

Series: POWER MOS V® Manufacturer: Microsemi Power Products Group
FET Type: MOSFET N-Channel, Metal Oxide FET Feature: Standard
Drain to Source Voltage (Vdss): 800V Current - Continuous Drain (Id) @ 25° C: 44A
Rds On (Max) @ Id, Vgs: 150 mOhm @ 500mA, 10V Interface Type : Ethernet, I2C, SPI, UART, USB
Vgs(th) (Max) @ Id: 4V @ 5mA Gate Charge (Qg) @ Vgs: 285nC @ 10V
Input Capacitance (Ciss) @ Vds: 17650pF @ 25V Power - Max: 700W
Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: ISOTOP?    

Description

FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Power - Max: 700W
Current - Continuous Drain (Id) @ 25° C: 44A
Manufacturer: Microsemi Power Products Group
Supplier Device Package: ISOTOP?
Drain to Source Voltage (Vdss): 800V
Series: POWER MOS V®
Rds On (Max) @ Id, Vgs: 150 mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 5mA
Gate Charge (Qg) @ Vgs: 285nC @ 10V
Input Capacitance (Ciss) @ Vds: 17650pF @ 25V


Features:

• Fast Recovery Body Diode
• 100% Avalanche Tested
• Lower Leakage
• Popular SOT-227 Package
• Faster Switching



Specifications

Symbol Parameter APT30M40JVR UNIT
VDSS Drain-Source Voltage 800 Volts
ID Continuous Drain Current @ TC = 25°C 44 Amps
IDM Pulsed Drain Current 176
VGS Gate-Source Voltage Continuous ±30 Volts
VGSM Gate-Source Voltage Transient ±40
PD Total Power Dissipation @ TC = 25°C 700 Watts
Linear Derating Factor 5.6 W/°C
TJ,TSTG Operating and Storage Junction Temperature Range -55 to 150
TL Lead Temperature: 0.063" from Case for 10 Sec. 300
IAR Avalanche Current (Repetitive and Non-Repetitive) 44 Amps
EAR Repetitive Avalanche Energy 50 mJ
EAS Single Pulse Avalanche Energy 3600



Description

Power MOS V® APT8015JVFR  is a new generation of high voltage N-Channel enhancement ode power MOSFETs. This new technology minimizes the JFET effect, ncreases packing density and reduces the on-resistance. Power MOS V® lso achieves faster switching speeds through optimized gate layout.




Parameters:

Technical/Catalog InformationAPT8015JVFR
VendorMicrosemi-PPG
CategoryDiscrete Semiconductor Products
Mounting TypeChassis Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25° C44A
Rds On (Max) @ Id, Vgs150 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 17650pF @ 25V
Power - Max700W
PackagingTube
Gate Charge (Qg) @ Vgs285nC @ 10V
Package / CaseSOT-227
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names APT8015JVFR
APT8015JVFR



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