Features: • Lower Input Capacitance • Increased Power Dissipation• Lower Miller Capacitance • Easier To Drive• Lower Gate Charge, Qg • Popular TO-264 MAX PackageSpecifications Symbol Parameter APT8014L2LL UNIT VDSS Drain-Source Voltage 800 ...
APT8014L2LL: Features: • Lower Input Capacitance • Increased Power Dissipation• Lower Miller Capacitance • Easier To Drive• Lower Gate Charge, Qg • Popular TO-264 MAX PackageS...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Symbol | Parameter |
APT8014L2LL |
UNIT |
VDSS | Drain-Source Voltage |
800 |
Volts |
ID | Continuous Drain Current @ TC = 25 |
52 |
Amps |
IDM | Pulsed Drain Current |
208 | |
VGS | Gate-Source Voltage |
±30 |
Volts |
VGSM | Gate-Source Voltage Transient |
±40 | |
PD | Total Power Dissipation @ TC = 25 |
890 |
Watts |
Linear Derating Factor |
7.12 |
W/ | |
TJ,TSTG | Operating and StorageTemperature Range |
-55 to 150 |
|
TL | Lead Temperature: 0.063" from Case for 10 Sec. |
300 | |
IAR | Avalanche Current(Repetitive and Non-epetitive) |
52 |
Amps |
EAR | Repetitive Avalanche Energy |
50 |
mJ |
EAS | Single Pulse Avalanche Energy |
3200 |
Power MOS 7TM APT8014L2LL is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.