APT56M50L

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25° C: 56A
Packaging: Tube
Mounting Type: Through Hole
Gate Charge (Qg) @ Vgs: 220nC @ 10V
Rds On (Max) @ Id, Vgs: 100 mOhm @ 28A, 10V
Manufacturer: Microsemi Power Products Group
Input Capacitance (Ciss) @ Vds: 8800pF @ 25V
Package / Case: TO-264-3, TO-264AA
Supplier Device Package: TO-264
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Power - Max: 780W


Parameters:

Technical/Catalog Information	APT56M50L
Vendor	Microsemi-PPG
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	56A
Rds On (Max) @ Id, Vgs	100 mOhm @ 28A, 10V
Input Capacitance (Ciss) @ Vds	8800pF @ 25V
Power - Max	780W
Packaging	Tube
Gate Charge (Qg) @ Vgs	220nC @ 10V
Package / Case	TO-264
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	APT56M50L APT56M50L APT56M50LMI ND APT56M50LMIND APT56M50LMI