APT5010B2LL

Specifications

Symbol	Parameter	APT5010	UNIT
VDSS	Drain-Source Voltage	500	Volts
ID	Continuous Drain Current @ TC = 25°C	46	Amps
IDM	Pulsed Drain Current	184
VGS	Gate-Source Voltage Continuous	±30	Volts
VGSM	Gate-Source Voltage Transient	±40
PD	Total Power Dissipation @ TC = 25°C	500	Watts
	Linear Derating Factor	4.0	W/°C
TJ,TSTG	Operating and Storage Junction Temperature Range	-55 to 150	°C
TL	Lead Temperature: 0.063" from Case for 10 Sec	300
IAR	Avalanche Current (Repetitive and Non-Repetitive)	46	Amps
EAR	Repetitive Avalanche Energy	50	mJ
EAS	Single Pulse Avalanche Energy	1800

Description

Power MOS 7^TM APT5010B2LL  is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7^TM by significantly lowering R_DS(ON) and Q_g. Power MOS 7^TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.