MOSFET N-CH 500V 46A T-MAX
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Specifications Symbol Parameter APT5010 UNIT VDSS Drain-Source Voltage 500 Volts ...
Specifications Symbol Parameter APT5010 UNIT VDSS Drain-Source Voltage 500 Volts ...
Series: | POWER MOS 7® | Manufacturer: | Microsemi Power Products Group | ||
FET Type: | MOSFET N-Channel, Metal Oxide | Transistor Type: | - | ||
Gain : | 19.5 dB | Current - Collector (Ic) (Max): | - | ||
FET Feature: | Standard | Drain to Source Voltage (Vdss): | 500V | ||
Voltage - Collector Emitter Breakdown (Max): | - | Current - Continuous Drain (Id) @ 25° C: | 46A | ||
Vce Saturation (Max) @ Ib, Ic: | - | Current - Collector Cutoff (Max): | - | ||
Rds On (Max) @ Id, Vgs: | 100 mOhm @ 23A, 10V | DC Current Gain (hFE) (Min) @ Ic, Vce: | - | ||
Vgs(th) (Max) @ Id: | 5V @ 2.5mA | Gate Charge (Qg) @ Vgs: | 95nC @ 10V | ||
Frequency - Transition: | - | Input Capacitance (Ciss) @ Vds: | 4360pF @ 25V | ||
Power - Max: | 520W | Mounting Type: | Through Hole | ||
Package / Case: | TO-247-3 Variant | Supplier Device Package: | T-MAX? [B2] |
Technical/Catalog Information | APT5010B2LLG |
Vendor | Microsemi-PPG |
Category | Discrete Semiconductor Products |
Mounting Type | Through Hole |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 500V |
Current - Continuous Drain (Id) @ 25° C | 46A |
Rds On (Max) @ Id, Vgs | 100 mOhm @ 23A, 10V |
Input Capacitance (Ciss) @ Vds | 4360pF @ 25V |
Power - Max | 520W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 95nC @ 10V |
Package / Case | T-MAX |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | APT5010B2LLG APT5010B2LLG |