APT50M85JVR

MOSFET N-CH 500V 50A SOT-227

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SeekIC No. : 004131060 Detail

APT50M85JVR: MOSFET N-CH 500V 50A SOT-227

floor Price/Ceiling Price

US $ 19.31~19.31 / Piece | Get Latest Price
Part Number:
APT50M85JVR
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~10
  • Unit Price
  • $19.31
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Series: POWER MOS V® Manufacturer: Microsemi Power Products Group
FET Type: MOSFET N-Channel, Metal Oxide FET Feature: Standard
Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25° C: 50A
Rds On (Max) @ Id, Vgs: 85 mOhm @ 500mA, 10V Interface Type : Ethernet, I2C, SPI, UART, USB
Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) @ Vgs: 535nC @ 10V
Input Capacitance (Ciss) @ Vds: 10800pF @ 25V Power - Max: 500W
Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: ISOTOP?    

Description

FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Drain to Source Voltage (Vdss): 500V
Manufacturer: Microsemi Power Products Group
Supplier Device Package: ISOTOP?
Power - Max: 500W
Current - Continuous Drain (Id) @ 25° C: 50A
Vgs(th) (Max) @ Id: 4V @ 1mA
Series: POWER MOS V®
Input Capacitance (Ciss) @ Vds: 10800pF @ 25V
Rds On (Max) @ Id, Vgs: 85 mOhm @ 500mA, 10V
Gate Charge (Qg) @ Vgs: 535nC @ 10V


Specifications

Symbol
Parameter
APT50M80JLC UNIT

VDSS

Drain-Source Voltage
500 Volts
ID
Continuous Drain Current @ TC = 25°C
50 Amps
IDM
Pulsed Drain Current
200
VGS Gate-Source Voltage Continuous
±30 Volts
VGSM
Gate-Source Voltage Transient
±40
PD Total Power Dissipation @ TC = 25°C
500 Watts

Linear Derating Factor
4 W/°C
TJ,TSTG Operating and Storage Junction Temperature Range
-55 to 150 °C
TL
Lead Temperature: 0.063" from Case for 10 Sec.
300
IAR Avalanche Current  (Repetitive and Non-Repetitive)
30 Amps
EAR
Repetitive Avalanche Energy

30 mJ
EAS
Single Pulse Avalanche Energy
3000



Parameters:

Technical/Catalog InformationAPT50M85JVR
VendorMicrosemi-PPG
CategoryDiscrete Semiconductor Products
Mounting TypeChassis Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C50A
Rds On (Max) @ Id, Vgs85 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 10800pF @ 25V
Power - Max500W
PackagingTube
Gate Charge (Qg) @ Vgs535nC @ 10V
Package / CaseSOT-227
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names APT50M85JVR
APT50M85JVR



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