Features: • TO-264 MAX Package • 100% Avalanche Tested• Faster Switching• Lower LeakageSpecifications Symbol Parameter APT50M60L2VR UNIT VDSS Drain-Source Voltage 500 Volts ID Continuous Drain Current @ TC = 25 77 Amps IDM Pulsed Drain Curr...
APT50M60L2VR: Features: • TO-264 MAX Package • 100% Avalanche Tested• Faster Switching• Lower LeakageSpecifications Symbol Parameter APT50M60L2VR UNIT VDSS Drain-Source Volta...
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Specifications Symbol Parameter APT5010 UNIT VDSS Drain-Source Voltage 500 Volts ...
Specifications Symbol Parameter APT5010 UNIT VDSS Drain-Source Voltage 500 Volts ...
Symbol | Parameter | APT50M60L2VR |
UNIT |
VDSS | Drain-Source Voltage |
500 |
Volts |
ID | Continuous Drain Current @ TC = 25 |
77 |
Amps |
IDM | Pulsed Drain Current |
308 | |
VGS | Gate-Source Voltage Continuous |
±30 |
Volts |
VGSM | Gate-Source Voltage Transient |
±40 | |
PD | Total Power Dissipation @ TC = 25 |
825 |
Watts |
Linear Derating Factor |
5.0 |
W/ | |
TJ,TSTG | Operating and StorageTemperature Range |
-55 to 150 |
|
TL | Lead Temperature: 0.063" from Case for 10 Sec. |
300 | |
IAR | Avalanche Current(Repetitive and Non-Repetitive) |
77 |
Amps |
EAR | Repetitive Avalanche Energy |
50 |
mJ |
EAS | Single Pulse Avalanche Energy |
3200 |
Power MOS V® APT50M60L2VR is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.