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APT50M60L2VFR

Features: • TO-264 MAX Package • Faster Switching• Lower Leakage • 100% Avalanche Tested• Fast Recovery Body DiodeSpecifications Symbol Parameter APT50M60L2VFR UNIT VDSS Drain-Source Voltage 500 Volts ID Continuous Drain Current @ TC = 25 77...

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SeekIC No. : 004287416 Detail

APT50M60L2VFR: Features: • TO-264 MAX Package • Faster Switching• Lower Leakage • 100% Avalanche Tested• Fast Recovery Body DiodeSpecifications Symbol Parameter APT50M60L2VFR ...

APT50M60L2VFR Data Sheet

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Part Number:
APT50M60L2VFR
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

• TO-264 MAX Package
• Faster Switching
• Lower Leakage
• 100% Avalanche Tested
• Fast Recovery Body Diode


Specifications

Symbol Parameter APT50M60L2VFR
UNIT
VDSS Drain-Source Voltage
500
Volts
ID Continuous Drain Current @ TC = 25
77
Amps
IDM Pulsed Drain Current
308
VGS Gate-Source Voltage Continuous
±30
Volts
VGSM Gate-Source Voltage Transient
±40
PD Total Power Dissipation @ TC = 25
825
Watts
Linear Derating Factor
6.6
W/
TJ,TSTG Operating and StorageTemperature Range
-55 to 150
TL Lead Temperature: 0.063" from Case for 10 Sec.
300
IAR Avalanche Current(Repetitive and Non-Repetitive)
77
Amps
EAR Repetitive Avalanche Energy
50
mJ
EAS Single Pulse Avalanche Energy
3200



Description

Power MOS V® APT50M60L2VFR is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.




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