APT50M50JVFR

MOSFET N-CH 500V 77A SOT-227

product image

APT50M50JVFR Picture
SeekIC No. : 004130983 Detail

APT50M50JVFR: MOSFET N-CH 500V 77A SOT-227

floor Price/Ceiling Price

US $ 33.2~33.2 / Piece | Get Latest Price
Part Number:
APT50M50JVFR
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~10
  • Unit Price
  • $33.2
  • Processing time
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/21

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Series: POWER MOS V® Manufacturer: Microsemi Power Products Group
FET Type: MOSFET N-Channel, Metal Oxide FET Feature: Standard
Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25° C: 77A
Interface Type : Ethernet, I2C, SPI, UART, USB Rds On (Max) @ Id, Vgs: 50 mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id: 4V @ 5mA Gate Charge (Qg) @ Vgs: 1000nC @ 10V
Input Capacitance (Ciss) @ Vds: 19600pF @ 25V Power - Max: 700W
Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: ISOTOP?    

Description

FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Drain to Source Voltage (Vdss): 500V
Power - Max: 700W
Manufacturer: Microsemi Power Products Group
Supplier Device Package: ISOTOP?
Current - Continuous Drain (Id) @ 25° C: 77A
Series: POWER MOS V®
Vgs(th) (Max) @ Id: 4V @ 5mA
Rds On (Max) @ Id, Vgs: 50 mOhm @ 500mA, 10V
Gate Charge (Qg) @ Vgs: 1000nC @ 10V
Input Capacitance (Ciss) @ Vds: 19600pF @ 25V


Features:

• Fast Recovery Body Diode
• 100% Avalanche Tested
• Lower Leakage
• Popular SOT-227 Package
• Faster Switching



Specifications

Symbol Parameter APT30M40JVR UNIT
VDSS Drain-Source Voltage 500 Volts
ID Continuous Drain Current @ TC = 25°C 77 Amps
IDM Pulsed Drain Current 308
VGS Gate-Source Voltage Continuous ±30 Volts
VGSM Gate-Source Voltage Transient ±40
PD Total Power Dissipation @ TC = 25°C 700 Watts
Linear Derating Factor 5.6 W/°C
TJ,TSTG Operating and Storage Junction Temperature Range -55 to 150
TL Lead Temperature: 0.063" from Case for 10 Sec. 300
IAR Avalanche Current (Repetitive and Non-Repetitive) 77 Amps
EAR Repetitive Avalanche Energy 50 mJ
EAS Single Pulse Avalanche Energy 3600



Description

Power MOS V® APT50M50JVFR is a new generation of high voltage N-Channel enhancement ode power MOSFETs. This new technology minimizes the JFET effect, ncreases packing density and reduces the on-resistance. Power MOS V® lso achieves faster switching speeds through optimized gate layout.




Parameters:

Technical/Catalog InformationAPT50M50JVFR
VendorMicrosemi-PPG
CategoryDiscrete Semiconductor Products
Mounting TypeChassis Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C77A
Rds On (Max) @ Id, Vgs50 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds 19600pF @ 25V
Power - Max700W
PackagingTube
Gate Charge (Qg) @ Vgs1000nC @ 10V
Package / CaseSOT-227
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names APT50M50JVFR
APT50M50JVFR



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Resistors
Tapes, Adhesives
803
Power Supplies - Board Mount
Hardware, Fasteners, Accessories
Cables, Wires
View more