APT50M38JLL

MOSFET N-CH 500V 88A SOT-227

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APT50M38JLL Picture
SeekIC No. : 004130981 Detail

APT50M38JLL: MOSFET N-CH 500V 88A SOT-227

floor Price/Ceiling Price

US $ 25.18~35.67 / Piece | Get Latest Price
Part Number:
APT50M38JLL
Mfg:
Supply Ability:
5000

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  • Unit Price
  • $35.67
  • $33.57
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  • $26.23
  • $25.7
  • $25.18
  • Processing time
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Upload time: 2024/11/23

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Product Details

Quick Details

Series: POWER MOS 7® Manufacturer: Microsemi Power Products Group
FET Type: MOSFET N-Channel, Metal Oxide FET Feature: Standard
Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25° C: 88A
Rds On (Max) @ Id, Vgs: 38 mOhm @ 44A, 10V Interface Type : Ethernet, I2C, SPI, UART, USB
Vgs(th) (Max) @ Id: 5V @ 5mA Gate Charge (Qg) @ Vgs: 270nC @ 10V
Input Capacitance (Ciss) @ Vds: 12000pF @ 25V Power - Max: 694W
Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: ISOTOP?    

Description

FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Drain to Source Voltage (Vdss): 500V
Gate Charge (Qg) @ Vgs: 270nC @ 10V
Manufacturer: Microsemi Power Products Group
Supplier Device Package: ISOTOP?
Input Capacitance (Ciss) @ Vds: 12000pF @ 25V
Series: POWER MOS 7®
Vgs(th) (Max) @ Id: 5V @ 5mA
Current - Continuous Drain (Id) @ 25° C: 88A
Rds On (Max) @ Id, Vgs: 38 mOhm @ 44A, 10V
Power - Max: 694W


Features:

• Lower Input Capacitance
• Increased Power Dissipation
• Lower Miller Capacitance
• Easier To Drive
• Lower Gate Charge, Qg
• Popular SOT-227 Package



Specifications

Symbol Parameter
APT50M38JLL
UNIT
VDSS Drain-Source Voltage
500
Volts
ID Continuous Drain Current @ TC = 25
91
Amps
IDM Pulsed Drain Current
364
VGS Gate-Source Voltage Continuous
±30
Volts
VGSM Gate-Source Voltage Transient
±40
PD Total Power Dissipation @ TC = 25
775
Watts
Linear Derating Factor
6.2
W/
TJ,TSTG Operating and StorageTemperature Range
-55 to 150
TL Lead Temperature: 0.063" from Case for 10 Sec.
300
IAR Avalanche Current(Repetitive and Non-Repetitive)
91
Amps
EAR Repetitive Avalanche Energy
50
mJ
EAS Single Pulse Avalanche Energy
3600



Description

Power MOS 7TM APT50M38JLL is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.




Parameters:

Technical/Catalog InformationAPT50M38JLL
VendorMicrosemi-PPG
CategoryDiscrete Semiconductor Products
Mounting TypeChassis Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C88A
Rds On (Max) @ Id, Vgs38 mOhm @ 44A, 10V
Input Capacitance (Ciss) @ Vds 12000pF @ 25V
Power - Max694W
PackagingTube
Gate Charge (Qg) @ Vgs270nC @ 10V
Package / CaseSOT-227
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names APT50M38JLL
APT50M38JLL



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