Features: • 600V Field Stop• Trench Gate: Low VCE(on)• Easy Paralleling• 6s Short Circuit Capability• 175°C RatedApplicationWelding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPSSpecifications Symbol Parameter Value Unit VCES Collector-Emitte...
APT50GN60B: Features: • 600V Field Stop• Trench Gate: Low VCE(on)• Easy Paralleling• 6s Short Circuit Capability• 175°C RatedApplicationWelding, Inductive Heating, Solar Inverters,...
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Specifications Symbol Parameter APT5010 UNIT VDSS Drain-Source Voltage 500 Volts ...
Specifications Symbol Parameter APT5010 UNIT VDSS Drain-Source Voltage 500 Volts ...
Symbol | Parameter | Value | Unit |
VCES | Collector-Emitter Voltage | 600 | Volts |
VGE | Gate-Emitter Voltage | ± 30 | Volts |
IC | Continuous Collector Current @ TC = 25°C | 107 | Amps |
IC | Continuous Collector Current @ TC = 110°C | 64 | Amps |
ICM | Pulsed Collector Current 1 | 150 | Amps |
SSOA | Switching Safe Operating Area @ TJ = 150°C | 150A @ 1200V | |
PD | Total Power Dissipation | 366 | Watts |
TL | Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. | 300 | °C |
Tj Tstg |
Operating and Storage Junction Temperature Range | -55 to 175 | °C |
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT APT50GN60B's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. Low gate charge simplifies gate drive design and minimizes losses.