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APT50GN120L2DQ2

Features: • 1200V NPT Field Stop• Trench Gate: Low VCE(on)• Easy Paralleling• 10s Short Circuit Capability• Intergrated Gate Resistor: Low EMI, High ReliabApplicationWelding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPSSpecifications Symbol Parame...

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SeekIC No. : 004287405 Detail

APT50GN120L2DQ2: Features: • 1200V NPT Field Stop• Trench Gate: Low VCE(on)• Easy Paralleling• 10s Short Circuit Capability• Intergrated Gate Resistor: Low EMI, High ReliabApplicationWe...

APT50GN120L2DQ2 Data Sheet

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Part Number:
APT50GN120L2DQ2
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• 1200V NPT Field Stop
• Trench Gate: Low VCE(on)
• Easy Paralleling
• 10s Short Circuit Capability
• Intergrated Gate Resistor: Low EMI, High Reliab


Application

Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS


Specifications

Symbol Parameter Value Unit
VCES Collector-Emitter Voltage 1200 Volts
VGE Gate-Emitter Voltage ± 30 Volts
IC Continuous Collector Current @ TC = 25°C 134 Amps
IC Continuous Collector Current @ TC = 110°C 66 Amps
ICM Pulsed Collector Current 1 150 Amps
SSOA Switching Safe Operating Area @ TJ = 150°C 150A @ 1200V  
PD Total Power Dissipation 543 Watts
TL Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. 300 °C
Tj
Tstg		 Operating and Storage Junction Temperature Range -55 to 150 °C



Description

Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT APT50GN120L2DQ2's have a very short, low amplitude tail current and low Eoff. The Trench Gate design results in superior VCE(on) performance. Easy paralleling results from very tight parameter distribution and slightly positive VCE(on) temperature coefficient. Built-in gate resistance ensures ultra-reliable operation. Low gate charge simplifies gate drive design and minimizes losses.




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