Specifications Symbol Parameter APT50GF60B2RD/LRD UNIT VCES Collector-Emitter Voltage 600 Volts VCGR Collector-Gate Voltage (RGE = 20KΩ) 600 VGE Gate-Emitter Voltage ±20 IC1 Continuous Collector Current @ TC = 25°C 80 Amps IC2 Continuous Collector Current @ ...
APT50GF60LRD: Specifications Symbol Parameter APT50GF60B2RD/LRD UNIT VCES Collector-Emitter Voltage 600 Volts VCGR Collector-Gate Voltage (RGE = 20KΩ) 600 VGE Gate-Emitter Voltage ±2...
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Specifications Symbol Parameter APT5010 UNIT VDSS Drain-Source Voltage 500 Volts ...
Specifications Symbol Parameter APT5010 UNIT VDSS Drain-Source Voltage 500 Volts ...
Symbol | Parameter | APT50GF60B2RD/LRD | UNIT |
VCES | Collector-Emitter Voltage | 600 | Volts |
VCGR | Collector-Gate Voltage (RGE = 20KΩ) | 600 | |
VGE | Gate-Emitter Voltage | ±20 | |
IC1 | Continuous Collector Current @ TC = 25°C | 80 | Amps |
IC2 | Continuous Collector Current @ TC = 90°C | 50 | |
ICM1 | Pulsed Collector Current @ TC = 25°C | 160 | |
ICM2 | Pulsed Collector Current@ TC = 90°C | 100 | |
PD | Total Power Dissipation | 300 | Watts |
TJ,TSTG | Operating and Storage Junction TemperatureRange | -55 to 150 | °C |
TL | Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. | 300 |