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Specifications Symbol Parameter APT50GF60B2RD/LRD UNIT VCES Collector-Emitter Voltage 600 Volts VCGR Collector-Gate Voltage (RGE = 20KΩ) 600 VGE Gate-Emitter Voltage ±20 IC1 Continuous Collector Current @ TC = 25°C 80 Amps IC2 Continuous Collector Current @ ...

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SeekIC No. : 004287400 Detail

APT50GF60B2RD: Specifications Symbol Parameter APT50GF60B2RD/LRD UNIT VCES Collector-Emitter Voltage 600 Volts VCGR Collector-Gate Voltage (RGE = 20KΩ) 600 VGE Gate-Emitter Voltage ±2...

APT50GF60B2RD Data Sheet

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Part Number:: APT50GF60B2RD
Supply Ability:: 5000

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1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/7/15

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Product Details

Description

Specifications

Symbol	Parameter	APT50GF60B2RD/LRD	UNIT
V_CES	Collector-Emitter Voltage	600	Volts
V_CGR	Collector-Gate Voltage (RGE = 20KΩ)	600
V_GE	Gate-Emitter Voltage	±20
I_C1	Continuous Collector Current @ TC = 25°C	80	Amps
I_C2	Continuous Collector Current @ TC = 90°C	50
I_CM1	Pulsed Collector Current@ TC = 25°C	160
I_CM2	Pulsed Collector Current@ TC = 90°C	100
P_D	Total Power Dissipation	300	Watts
T_J,T_STG	Operating and Storage Junction TemperatureRange	-55 to 150	°C
T_L	Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.	300	°C

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APT50GF60B2RD

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