Features: • Identical Specifications: TO-247 or Surface Mount D3PAK Package• Lower Gate Charge & Capacitance • Easier To Drive• 100% Avalanche Tested • Faster switchingSpecifications Symbol Parameter APT5020 UNIT VDSS Drain-Source Voltage 500 ...
APT5020BLC: Features: • Identical Specifications: TO-247 or Surface Mount D3PAK Package• Lower Gate Charge & Capacitance • Easier To Drive• 100% Avalanche Tested • Faster switc...
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Specifications Symbol Parameter APT5010 UNIT VDSS Drain-Source Voltage 500 Volts ...
Specifications Symbol Parameter APT5010 UNIT VDSS Drain-Source Voltage 500 Volts ...
Symbol | Parameter |
APT5020 |
UNIT |
VDSS | Drain-Source Voltage |
500 |
Volts |
ID | Continuous Drain Current @ TC = 25 |
26 |
Amps |
IDM | Pulsed Drain Current |
104 | |
VGS | Gate-Source Voltage Continuous |
±30 |
Volts |
VGSM | Gate-Source Voltage Transient |
±40 | |
PD | Total Power Dissipation @ TC = 25 |
300 |
Watts |
Linear Derating Factor |
2.4 |
W/ | |
TJ,TSTG | Operating and StorageTemperature Range |
-55 to 150 |
|
TL | Lead Temperature: 0.063" from Case for 10 Sec. |
300 | |
IAR | Avalanche Current(Repetitive and Non-Repetitive) |
26 |
Amps |
EAR | Repetitive Avalanche Energy |
30 |
mJ |
EAS | Single Pulse Avalanche Energy |
1300 |
Power MOS VITM APT5020BLC is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout,delivers exceptionally fast switching speeds.