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APT5017BLC

Features: • Identical Specifications: TO-247 or Surface Mount D3PAK Package• Lower Gate Charge & Capacitance • Easier To Drive• 100% Avalanche Tested • Faster switchingSpecifications Symbol Parameter APT5017 UNIT VDSS Drain-Source Voltage 500 ...

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SeekIC No. : 004287365 Detail

APT5017BLC: Features: • Identical Specifications: TO-247 or Surface Mount D3PAK Package• Lower Gate Charge & Capacitance • Easier To Drive• 100% Avalanche Tested • Faster switc...

APT5017BLC Data Sheet

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Part Number:
APT5017BLC
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/7/15

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Product Details

Description



Features:

• Identical Specifications: TO-247 or Surface Mount D3PAK Package
• Lower Gate Charge & Capacitance
• Easier To Drive
• 100% Avalanche Tested
• Faster switching


Specifications

Symbol Parameter
APT5017
UNIT
VDSS Drain-Source Voltage
500
Volts
ID Continuous Drain Current @ TC = 25
30
Amps
IDM Pulsed Drain Current
120
VGS Gate-Source Voltage Continuous
±30
Volts
VGSM Gate-Source Voltage Transient
±40
PD Total Power Dissipation @ TC = 25
370
Watts
Linear Derating Factor
3.96
W/
TJ,TSTG Operating and StorageTemperature Range
-55 to 150
TL Lead Temperature: 0.063" from Case for 10 Sec.
300
IAR Avalanche Current(Repetitive and Non-Repetitive)
30
Amps
EAR Repetitive Avalanche Energy
30
mJ
EAS Single Pulse Avalanche Energy
1300



Description

Power MOS VITM APT5017BLC  is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout,delivers exceptionally fast switching speeds.




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