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APT5016SLL

Features: Lower Input Capacitance Increased Power Dissipation Lower Miller Capacitance Easier To Drive Lower Gate Charge, Qg TO-247 or Surface Mount D PAK PackageSpecifications Symbol Parameter APT5016 UNIT VDSS Drain-Source Voltage 500 Volts I D ...

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SeekIC No. : 004287363 Detail

APT5016SLL: Features: Lower Input Capacitance Increased Power Dissipation Lower Miller Capacitance Easier To Drive Lower Gate Charge, Qg TO-247 or Surface Mount D PAK PackageSpecifications Symbol ...

APT5016SLL Data Sheet

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Part Number:
APT5016SLL
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/8/14

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Product Details

Description



Features:

Lower Input Capacitance

Increased Power Dissipation
Lower Miller Capacitance

Easier To Drive
Lower Gate Charge, Qg

TO-247 or Surface Mount D PAK Package




Specifications

Symbol
Parameter
APT5016
 
UNIT
VDSS
Drain-Source Voltage
500
Volts
I D

Continuous Drain Current

30
Amps

IDM

Pulsed Drain Current

120
VGS
Gate-Source Voltage Continuous
±30
Volts
VGSM
Gate-Source Voltage Transient
±40
PD
Total Power Dissipation @ TC = 25°C
325
Watts
Linear Derating Factor
2.6
W/
TJ ,TSTG
Operating and Storage Junction Temperature Range
-55 to 150
TL
Lead Temperature: 0.063" from Case for 10 Sec.
300
IAR
Avalanche Current (Repetitive and Non-Repetitive)
30
Amps
EAR
Repetitive Avalanche Energy
30
mJ
EAS
Single Pulse Avalanche Energy
1300
 



Description


Power MOS 7TM  APT5016SLL is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS.  Both conduction and switching losses are addressed with Power MOS 7 TM by significantly lowering R DS(ON)and Q g.  Power MOS 7 combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent with APT's patented metal gate structure.




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