Features: Lower Input Capacitance Increased Power Dissipation Lower Miller Capacitance Easier To Drive Lower Gate Charge, Qg TO-247 or Surface Mount D PAK PackageSpecifications Symbol Parameter APT5016 UNIT VDSS Drain-Source Voltage 500 Volts I D ...
APT5016SLL: Features: Lower Input Capacitance Increased Power Dissipation Lower Miller Capacitance Easier To Drive Lower Gate Charge, Qg TO-247 or Surface Mount D PAK PackageSpecifications Symbol ...
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Specifications Symbol Parameter APT5010 UNIT VDSS Drain-Source Voltage 500 Volts ...
Specifications Symbol Parameter APT5010 UNIT VDSS Drain-Source Voltage 500 Volts ...
Lower Input Capacitance
Increased Power Dissipation
Lower Miller Capacitance
Easier To Drive
Lower Gate Charge, Qg
TO-247 or Surface Mount D PAK Package
Symbol |
Parameter |
APT5016
|
UNIT |
VDSS |
Drain-Source Voltage |
500 |
Volts |
I D |
Continuous Drain Current |
30 |
Amps |
IDM |
Pulsed Drain Current |
120 | |
VGS |
Gate-Source Voltage Continuous |
±30 |
Volts |
VGSM |
Gate-Source Voltage Transient |
±40 | |
PD |
Total Power Dissipation @ TC = 25°C |
325 |
Watts |
Linear Derating Factor |
2.6 |
W/ | |
TJ ,TSTG |
Operating and Storage Junction Temperature Range |
-55 to 150 |
|
TL |
Lead Temperature: 0.063" from Case for 10 Sec. |
300 | |
IAR |
Avalanche Current (Repetitive and Non-Repetitive) |
30 |
Amps |
EAR |
Repetitive Avalanche Energy |
30 |
mJ |
EAS |
Single Pulse Avalanche Energy |
1300 |
Power MOS 7TM APT5016SLL is a new generation of low loss, high voltage, N-Channelenhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 TM by significantly lowering R DS(ON)and Q g. Power MOS 7 combines lower conduction and switching lossesalong with exceptionally fast switching speeds inherent with APT's patented metal gate structure.