FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Feature: Standard
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25° C: 30A
Packaging: Tube
Gate Charge (Qg) @ Vgs: 72nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Manufacturer: Microsemi Power Products Group
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Series: POWER MOS 7®
Rds On (Max) @ Id, Vgs: 160 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds: 2833pF @ 25V
Power - Max: 329W
Supplier Device Package: D3 [S]
DescriptionThe APT5016SFLLG is a new generation of low loss, high voltage, N-Channe enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Q. The features of the APT5016SFLLG are: (1)Lower Input Capacitance; (2)Lower Miller Capacitance; (3)Lower Gate Charge, Qg; (4)Increased Power Dissipation; (5)Easier To Drive; (6)TO-247 or Surface Mount D3 PAK Package.
The following is about the absolute maximum ratings of APT5016SFLLG: (1)Drain-Source Voltage: 500 Volts; (2)Continuous Drain Current: 30 A; (3)Pulsed Drain Current: 120A; (4)Gate-Source Voltage Continuous: ±30 V; (5)Gate-Source Voltage Transient: ±40 V; (6)Total Power Dissipation @ TC = 25°C: 325 W; (7)Linear Derating Factor: 2.6 W/ ; (8)Operating and Storage Junction Temperature Range: -55 to 150 ; (9)Lead Temperature: 0.063" from Case for 10 Sec.: 300 ; (10)Avalanche Current (Repetitive and Non-Repetitive): 30 A; (11)Repetitive Avalanche Energy:30mJ; (12)Single Pulse Avalanche Energy: 1300 mJ.
The electrical characteristics of the APT5016SFLLG are: (1)drain-source breakdown voltage: 500V min; (2)on state drain current: 30A; (3)drain-source on-state resistance: 0.160 Ohms; (4)zero gate voltage drain current(VDS=VDSS, VGS=0V): 250A; (5)zero gate voltage drain current(VDS=0.8VDSS, VGS=0V, TC=125): 1000A; (6)gate-source leakage current: ±100nA; (7)gate threshold voltage: 3V min and 5V max.
Parameters: | Technical/Catalog Information | APT5016SFLLG |
| Vendor | Microsemi-PPG |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 500V |
| Current - Continuous Drain (Id) @ 25° C | 30A |
| Rds On (Max) @ Id, Vgs | 160 mOhm @ 15A, 10V |
| Input Capacitance (Ciss) @ Vds | 2833pF @ 25V |
| Power - Max | 329W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 72nC @ 10V |
| Package / Case | D³Pak (2 leads + tab) |
| FET Feature | Standard |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | APT5016SFLLG
APT5016SFLLG
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APT5016SFLLG Data Sheet
