Features: Lower Input CapacitanceLower Miller CapacitanceLower Gate Charge, Qg Increased Power DissipationEasier To DriveTO-247 or Surface Mount D3 PAK PackageSpecifications Symbol Parameter APT5016 UNIT VDSS Drain-Source Voltage 500 Volts I D Continuous Drain Current ...
APT5016BFLL: Features: Lower Input CapacitanceLower Miller CapacitanceLower Gate Charge, Qg Increased Power DissipationEasier To DriveTO-247 or Surface Mount D3 PAK PackageSpecifications Symbol Parameter...
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Specifications Symbol Parameter APT5010 UNIT VDSS Drain-Source Voltage 500 Volts ...
Specifications Symbol Parameter APT5010 UNIT VDSS Drain-Source Voltage 500 Volts ...
Lower Input Capacitance
Lower Miller Capacitance
Lower Gate Charge, Qg
Increased Power Dissipation
Easier To Drive
TO-247 or Surface Mount D3 PAK Package
Symbol | Parameter |
APT5016
|
UNIT |
VDSS | Drain-Source Voltage |
500 | Volts |
I D | Continuous Drain Current |
30 |
Amps |
IDM |
Pulsed Drain Current |
120 | |
VGS | Gate-Source Voltage Continuous |
±30 | Volts |
VGSM | Gate-Source Voltage Transient | ±40 | |
PD | Total Power Dissipation @ TC = 25°C |
325 | Watts |
Linear Derating Factor | 2.6 | W/ | |
TJ ,TSTG | Operating and Storage Junction Temperature Range | -55 to 150 | |
TL | Lead Temperature: 0.063" from Case for 10 Sec. | 300 | |
IAR | Avalanche Current (Repetitive and Non-Repetitive) | 30 | Amps |
EAR | Repetitive Avalanche Energy | 30 | mJ |
EAS | Single Pulse Avalanche Energy | 1300 |
POWER MOS 7TM Power MOS 7 APT5016BFLL is a new generation of low loss, high voltage, N-Channe enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Q . Power MOS 7 combines lower conduction and switching lossesg along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.