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APT5010LVFR

Features: • Fast Recovery Body Diode • 100% Avalanche Tested• Lower Leakage • Popular TO-264 Package• Faster SwitchingSpecifications Symbol Parameter APT5010LVFR UNIT VDSS Drain-Source Voltage 400 Volts ID Continuous Drain Current @ TC = 25 ...

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SeekIC No. : 004287349 Detail

APT5010LVFR: Features: • Fast Recovery Body Diode • 100% Avalanche Tested• Lower Leakage • Popular TO-264 Package• Faster SwitchingSpecifications Symbol Parameter APT5010LVFR...

APT5010LVFR Data Sheet

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Part Number:
APT5010LVFR
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

• Fast Recovery Body Diode
• 100% Avalanche Tested
• Lower Leakage
• Popular TO-264 Package
• Faster Switching


Specifications

Symbol Parameter APT5010LVFR
UNIT
VDSS Drain-Source Voltage
400
Volts
ID Continuous Drain Current @ TC = 25
47
Amps
IDM Pulsed Drain Current
188
VGS Gate-Source Voltage Continuous
±30
Volts
VGSM Gate-Source Voltage Transient
±40
PD Total Power Dissipation @ TC = 25
520
Watts
Linear Derating Factor
4.16
W/
TJ,TSTG Operating and StorageTemperature Range
-55 to 150
TL Lead Temperature: 0.063" from Case for 10 Sec.
300
IAR Avalanche Current(Repetitive and Non-Repetitive)
47
Amps
EAR Repetitive Avalanche Energy
50
mJ
EAS Single Pulse Avalanche Energy
2500



Description

Power MOS V® APT5010LVFR is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.




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