APT5010JVRU2

MOSFET N-CH 500V 44A SOT227

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SeekIC No. : 004131052 Detail

APT5010JVRU2: MOSFET N-CH 500V 44A SOT227

floor Price/Ceiling Price

US $ 17.95~27.68 / Piece | Get Latest Price
Part Number:
APT5010JVRU2
Mfg:
Supply Ability:
5000

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  • Unit Price
  • $27.68
  • $25.81
  • $22.44
  • $20.95
  • $19.9
  • $19.08
  • $18.55
  • $17.95
  • Processing time
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Upload time: 2024/11/21

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Product Details

Quick Details

Series: - Manufacturer: Microsemi Power Products Group
FET Type: MOSFET N-Channel, Metal Oxide FET Feature: Standard
Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25° C: 44A
Rds On (Max) @ Id, Vgs: 100 mOhm @ 22A, 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) @ Vgs: 312nC @ 10V Input Capacitance (Ciss) @ Vds: 7410pF @ 25V
Package / Case : PGBA-516 Power - Max: 450W
Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25° C: 44A
Manufacturer: Microsemi Power Products Group
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Packaging: Bulk
Power - Max: 450W
Rds On (Max) @ Id, Vgs: 100 mOhm @ 22A, 10V
Gate Charge (Qg) @ Vgs: 312nC @ 10V
Input Capacitance (Ciss) @ Vds: 7410pF @ 25V


Features:

• Faster Switching
• 100% Avalanche Tested
• Lower Leakage
• Popular SOT-227 Package
• Single Die MOSFET & FRED
• PFC "Boost" Configuration



Specifications

Symbol Parameter APT30M40JVR UNIT
VDSS Drain-Source Voltage 500 Volts
ID Continuous Drain Current @ TC = 25°C 44 Amps
IDM Pulsed Drain Current 176
VGS Gate-Source Voltage Continuous ±30 Volts
VGSM Gate-Source Voltage Transient ±40
PD Total Power Dissipation @ TC = 25°C 450 Watts
Linear Derating Factor 3.6 W/°C
TJ,TSTG Operating and Storage Junction Temperature Range -55 to 150
TL Lead Temperature: 0.063" from Case for 10 Sec. 300
IAR Avalanche Current (Repetitive and Non-Repetitive) 44 Amps
EAR Repetitive Avalanche Energy 50 mJ
EAS Single Pulse Avalanche Energy 2500



Description

Power MOS V® APT5010JVRU2 is a new generation of high voltage N-Channel enhancement ode power MOSFETs. This new technology minimizes the JFET effect, ncreases packing density and reduces the on-resistance. Power MOS V® lso achieves faster switching speeds through optimized gate layout.




Parameters:

Technical/Catalog InformationAPT5010JVRU2
VendorMicrosemi-PPG
CategoryDiscrete Semiconductor Products
Mounting TypeChassis Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C44A
Rds On (Max) @ Id, Vgs100 mOhm @ 22A, 10V
Input Capacitance (Ciss) @ Vds 7410pF @ 25V
Power - Max450W
PackagingBulk
Gate Charge (Qg) @ Vgs312nC @ 10V
Package / CaseSOT-227B miniBLOC
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names APT5010JVRU2
APT5010JVRU2
APT5010JVRU2MI ND
APT5010JVRU2MIND
APT5010JVRU2MI



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