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APT5010JLL

MOSFET N-CH 500V 41A SOT-227

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SeekIC No. : 004130671 Detail

APT5010JLL: MOSFET N-CH 500V 41A SOT-227

APT5010JLL Data Sheet

floor Price/Ceiling Price

US $ 10.5~17.5 / Piece | Get Latest Price
Part Number:
APT5010JLL
Mfg:
Supply Ability:
5000

Price Break

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  • 10~100
  • 100~250
  • 250~500
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  • Unit Price
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  • $16.19
  • $13.78
  • $12.69
  • $12.03
  • $11.38
  • $11.03
  • $10.72
  • $10.5
  • Processing time
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Product Details

Quick Details

Series: POWER MOS 7® Manufacturer: Microsemi Power Products Group
FET Type: MOSFET N-Channel, Metal Oxide FET Feature: Standard
Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25° C: 41A
Rds On (Max) @ Id, Vgs: 100 mOhm @ 20.5A, 10V Interface Type : Ethernet, I2C, SPI, UART, USB
Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) @ Vgs: 95nC @ 10V
Input Capacitance (Ciss) @ Vds: 4360pF @ 25V Power - Max: 378W
Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: ISOTOP?    

Description

FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Drain to Source Voltage (Vdss): 500V
Manufacturer: Microsemi Power Products Group
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP?
Series: POWER MOS 7®
Current - Continuous Drain (Id) @ 25° C: 41A
Rds On (Max) @ Id, Vgs: 100 mOhm @ 20.5A, 10V
Gate Charge (Qg) @ Vgs: 95nC @ 10V
Input Capacitance (Ciss) @ Vds: 4360pF @ 25V
Power - Max: 378W


Specifications

Symbol Parameter APT5010JLC UNIT
VDSS Drain-Source Voltage 500 Volts
ID Continuous Drain Current @ TC = 25°C 44 Amps
IDM Pulsed Drain Current 176
VGS Gate-Source Voltage Continuous ±30 Volts
VGSM Gate-Source Voltage Transient ±40
PD Total Power Dissipation @ TC = 25°C 440 Watts
Linear Derating Factor 3.52 W/°C
TJ,TSTG Operating and Storage Junction Temperature Range -55 to 150 °C
TL Lead Temperature: 0.063" from Case for 10 Sec. 300
IAR Avalanche Current (Repetitive and Non-Repetitive) 44 Amps
EAR Repetitive Avalanche Energy 50 mJ
EAS Single Pulse Avalanche Energy 1800



Parameters:

Technical/Catalog InformationAPT5010JLL
VendorMicrosemi-PPG
CategoryDiscrete Semiconductor Products
Mounting TypeChassis Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C41A
Rds On (Max) @ Id, Vgs100 mOhm @ 20.5A, 10V
Input Capacitance (Ciss) @ Vds 4360pF @ 25V
Power - Max378W
PackagingTube
Gate Charge (Qg) @ Vgs95nC @ 10V
Package / CaseSOT-227
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names APT5010JLL
APT5010JLL



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