MOSFET N-CH 1200V 19A SOT-227
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Features: SpecificationsDescription APT1001R1AN is a kind of N-channel enhancement mode high volt...
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Specifications Symbol Parameter APT1001R1BN APT1001R3BN UNIT VDSS Drain-Source Voltag...
Series: | POWER MOS 8™ | Manufacturer: | Microsemi Power Products Group |
FET Type: | MOSFET N-Channel, Metal Oxide | FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 1200V (1.2kV) | Current - Continuous Drain (Id) @ 25° C: | 19A |
Rds On (Max) @ Id, Vgs: | 530 mOhm @ 14A, 10V | Interface Type : | Ethernet, I2C, SPI, UART, USB |
Vgs(th) (Max) @ Id: | 5V @ 2.5mA | Gate Charge (Qg) @ Vgs: | 300nC @ 10V |
Input Capacitance (Ciss) @ Vds: | 9670pF @ 25V | Power - Max: | 545W |
Mounting Type: | Chassis Mount | Package / Case: | SOT-227-4, miniBLOC |
Supplier Device Package: | ISOTOP? |
Technical/Catalog Information | APT19M120J |
Vendor | Microsemi-PPG |
Category | Discrete Semiconductor Products |
Mounting Type | Chassis Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25° C | 19A |
Rds On (Max) @ Id, Vgs | 560 mOhm @ 14A, 10V |
Input Capacitance (Ciss) @ Vds | 9670pF @ 25V |
Power - Max | 545W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 300nC @ 10V |
Package / Case | SOT-227 |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | APT19M120J APT19M120J |