Specifications Symbol Parameter APT1001R1BN APT1001R3BN UNIT VDSS Drain-Source Voltage 1000 1000 Volts ID Continuous Drain Current @ TC = 25°C 10.5 10 Amps IDM Pulsed Drain Current 42 40 VGS Gate-Source Voltage ±30 Volts PD Total Power Dissipation @ TC = 25...
APT1001R1BN: Specifications Symbol Parameter APT1001R1BN APT1001R3BN UNIT VDSS Drain-Source Voltage 1000 1000 Volts ID Continuous Drain Current @ TC = 25°C 10.5 10 Amps IDM Pulsed Drai...
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Features: SpecificationsDescription APT1001R1AN is a kind of N-channel enhancement mode high volt...
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Features: Fast Recovery Body Diode Faster Switching 100% Avalanche Tested Lower Leakage Pop...
Symbol | Parameter | APT1001R1BN | APT1001R3BN | UNIT |
VDSS | Drain-Source Voltage | 1000 | 1000 | Volts |
ID | Continuous Drain Current @ TC = 25°C |
10.5 | 10 | Amps |
IDM | Pulsed Drain Current | 42 | 40 | |
VGS | Gate-Source Voltage |
±30 |
Volts | |
PD | Total Power Dissipation @ TC = 25°C |
310 |
Watts | |
Linear Derating Factor |
2.48 |
W/°C | ||
TJ,TSTG | Operating and Storage Junction Temperature Range |
-55 to150 |
°C | |
TL | Lead Temperature: 0.063" from Case for 10 Sec. |
300 |