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APT18M80S

Features: • Fast switching with low EMI/RFI• Low RDS(on)• Ultra low Crss for improved noise immunity• Low gate charge• Avalanche energy rated• RoHS compliantApplication• PFC and other boost converter• Buck converter• Two switch forward (asymmet...

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SeekIC No. : 004287175 Detail

APT18M80S: Features: • Fast switching with low EMI/RFI• Low RDS(on)• Ultra low Crss for improved noise immunity• Low gate charge• Avalanche energy rated• RoHS compliantAppli...

APT18M80S Data Sheet

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Part Number:
APT18M80S
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Fast switching with low EMI/RFI
• Low RDS(on)
• Ultra low Crss for improved noise immunity
• Low gate charge
• Avalanche energy rated
• RoHS compliant




Application

• PFC and other boost converter
• Buck converter
• Two switch forward (asymmetrical bridge)
• Single switch forward
• Flyback
• Inverters


Specifications

Symbol Parameter Ratings Unit
ID Continuous Drain Current @ TC = 25°C 18 A
Continuous Drain Current @ TC = 100°C 12
IDM Pulsed Drain Current 1 70
VGS Gate-Source Voltage ±30 V
EAS Single Pulse Avalanche Energy 2 795 mJ
IAR Avalanche Current, Repetitive or Non-Repetitive 9 A



Description

Power MOS 8™ APT18M80S is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability.




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