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APT18M100B

MOSFET N-CH 1000V 18A TO-247

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SeekIC No. : 003431646 Detail

APT18M100B: MOSFET N-CH 1000V 18A TO-247

APT18M100B Data Sheet

floor Price/Ceiling Price

US $ 3.59~7.33 / Piece | Get Latest Price
Part Number:
APT18M100B
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • 250~500
  • 500~1000
  • 1000~2500
  • 2500~5000
  • 5000~10000
  • Unit Price
  • $7.33
  • $6.59
  • $5.42
  • $4.98
  • $4.54
  • $3.95
  • $3.81
  • $3.66
  • $3.59
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Series: - Manufacturer: Microsemi Power Products Group
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 1000V (1kV)
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 18A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 700 mOhm @ 9A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) @ Vgs: 150nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 4845pF @ 25V
Power - Max: 625W Mounting Type: Through Hole
Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]    

Description

Series: -
FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 18A
Packaging: Tube
Mounting Type: Through Hole
Gate Charge (Qg) @ Vgs: 150nC @ 10V
Package / Case: TO-247-3
Drain to Source Voltage (Vdss): 1000V (1kV)
Vgs(th) (Max) @ Id: 5V @ 1mA
Manufacturer: Microsemi Power Products Group
Supplier Device Package: TO-247 [B]
Power - Max: 625W
Rds On (Max) @ Id, Vgs: 700 mOhm @ 9A, 10V
Input Capacitance (Ciss) @ Vds: 4845pF @ 25V


Parameters:

Technical/Catalog InformationAPT18M100B
VendorMicrosemi-PPG
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1000V (1kV)
Current - Continuous Drain (Id) @ 25° C18A
Rds On (Max) @ Id, Vgs700 mOhm @ 9A, 10V
Input Capacitance (Ciss) @ Vds 4845pF @ 25V
Power - Max625W
PackagingTube
Gate Charge (Qg) @ Vgs150nC @ 10V
Package / CaseTO-247
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names APT18M100B
APT18M100B
APT18M100BMI ND
APT18M100BMIND
APT18M100BMI



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