APT12M80B

MOSFET N-CH 800V 13A TO-247

product image

APT12M80B Picture
SeekIC No. : 003431405 Detail

APT12M80B: MOSFET N-CH 800V 13A TO-247

floor Price/Ceiling Price

US $ 1.97~4.02 / Piece | Get Latest Price
Part Number:
APT12M80B
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • 250~500
  • 500~1000
  • 1000~2500
  • 2500~5000
  • 5000~10000
  • Unit Price
  • $4.02
  • $3.62
  • $2.97
  • $2.73
  • $2.49
  • $2.17
  • $2.09
  • $2.01
  • $1.97
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/26

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Series: POWER MOS 8™ Manufacturer: Microsemi Power Products Group
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 800V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 13A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 800 mOhm @ 6A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) @ Vgs: 80nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 2470pF @ 25V
Power - Max: 335W Mounting Type: Through Hole
Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 13A
Packaging: Tube
Mounting Type: Through Hole
Gate Charge (Qg) @ Vgs: 80nC @ 10V
Package / Case: TO-247-3
Drain to Source Voltage (Vdss): 800V
Vgs(th) (Max) @ Id: 5V @ 1mA
Input Capacitance (Ciss) @ Vds: 2470pF @ 25V
Manufacturer: Microsemi Power Products Group
Series: POWER MOS 8™
Supplier Device Package: TO-247 [B]
Power - Max: 335W
Rds On (Max) @ Id, Vgs: 800 mOhm @ 6A, 10V


Parameters:

Technical/Catalog InformationAPT12M80B
VendorMicrosemi-PPG
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25° C12A
Rds On (Max) @ Id, Vgs900 mOhm @ 6A, 10V
Input Capacitance (Ciss) @ Vds 2470pF @ 25V
Power - Max335W
PackagingTube
Gate Charge (Qg) @ Vgs80nC @ 10V
Package / CaseTO-247
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names APT12M80B
APT12M80B



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Static Control, ESD, Clean Room Products
Potentiometers, Variable Resistors
Fans, Thermal Management
Batteries, Chargers, Holders
Isolators
LED Products
View more