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APT12060B2VFRG

MOSFET N-CH 1200V 20A T-MAX

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SeekIC No. : 003430512 Detail

APT12060B2VFRG: MOSFET N-CH 1200V 20A T-MAX

APT12060B2VFRG Data Sheet

floor Price/Ceiling Price

US $ 16.86~16.86 / Piece | Get Latest Price
Part Number:
APT12060B2VFRG
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~30
  • Unit Price
  • $16.86
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/27

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Product Details

Quick Details

Series: POWER MOS V® Manufacturer: Microsemi Power Products Group
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 1200V (1.2kV)
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 20A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 600 mOhm @ 10A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) @ Vgs: 650nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 9500pF @ 25V
Power - Max: 625W Mounting Type: Through Hole
Package / Case: TO-247-3 Variant Supplier Device Package: T-MAX? [B2]    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Current - Continuous Drain (Id) @ 25° C: 20A
Packaging: Tube
Mounting Type: Through Hole
Vgs(th) (Max) @ Id: 4V @ 1mA
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Manufacturer: Microsemi Power Products Group
Power - Max: 625W
Series: POWER MOS V®
Package / Case: TO-247-3 Variant
Supplier Device Package: T-MAX? [B2]
Gate Charge (Qg) @ Vgs: 650nC @ 10V
Rds On (Max) @ Id, Vgs: 600 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds: 9500pF @ 25V


Parameters:

Technical/Catalog InformationAPT12060B2VFRG
VendorMicrosemi-PPG
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25° C20A
Rds On (Max) @ Id, Vgs600 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds 9500pF @ 25V
Power - Max625W
PackagingTube
Gate Charge (Qg) @ Vgs650nC @ 10V
Package / CaseT-MAX
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names APT12060B2VFRG
APT12060B2VFRG



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