APT12057JFLL

MOSFET N-CH 1200V 19A SOT-227

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SeekIC No. : 004131035 Detail

APT12057JFLL: MOSFET N-CH 1200V 19A SOT-227

floor Price/Ceiling Price

US $ 18.39~28.36 / Piece | Get Latest Price
Part Number:
APT12057JFLL
Mfg:
Supply Ability:
5000

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  • Unit Price
  • $28.36
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  • $19.54
  • $19
  • $18.39
  • Processing time
  • 15 Days
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Upload time: 2024/12/21

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Product Details

Quick Details

Series: POWER MOS 7® Manufacturer: Microsemi Power Products Group
FET Type: MOSFET N-Channel, Metal Oxide FET Feature: Standard
Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25° C: 19A
Rds On (Max) @ Id, Vgs: 570 mOhm @ 9.5A, 10V Interface Type : Ethernet, I2C, SPI, UART, USB
Vgs(th) (Max) @ Id: 5V @ 2.5mA Gate Charge (Qg) @ Vgs: 185nC @ 10V
Input Capacitance (Ciss) @ Vds: 5155pF @ 25V Power - Max: 520W
Mounting Type: Chassis Mount Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: ISOTOP?    

Description

FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Standard
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Tube
Power - Max: 520W
Manufacturer: Microsemi Power Products Group
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: ISOTOP?
Gate Charge (Qg) @ Vgs: 185nC @ 10V
Series: POWER MOS 7®
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25° C: 19A
Rds On (Max) @ Id, Vgs: 570 mOhm @ 9.5A, 10V
Input Capacitance (Ciss) @ Vds: 5155pF @ 25V


Features:

• Lower Input Capacitance
• Increased Power Dissipation
• Lower Miller Capacitance
• Easier To Drive
• Lower Gate Charge, Qg
• Popular SOT-227 Package



Specifications

Symbol

Parameter
APT12057JFLL
Units
VDSS
ID
IDM
VGS
VGSM
PD

TJ,TSTG
TL
IAR
EAR
EAS
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
1200
19
76
±30
±40
520
4.17
-55 to 150
300
19
50
3000
Volts

Amps

Volts
Watts
W/°C

°C
Amps

mJ



Description

Power MOS 7® APT12057JFLL is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.




Parameters:

Technical/Catalog InformationAPT12057JFLL
VendorMicrosemi-PPG
CategoryDiscrete Semiconductor Products
Mounting TypeChassis Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25° C19A
Rds On (Max) @ Id, Vgs570 mOhm @ 9.5A, 10V
Input Capacitance (Ciss) @ Vds 5155pF @ 25V
Power - Max520W
PackagingTube
Gate Charge (Qg) @ Vgs185nC @ 10V
Package / CaseSOT-227
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names APT12057JFLL
APT12057JFLL



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