MOSFET N-CH 1200V 19A SOT-227
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Features: SpecificationsDescription APT1001R1AN is a kind of N-channel enhancement mode high volt...
Features: Faster Switching 100% Avalanche Tested Lower Leakage PopularTO-3 PackageSpecificat...
Specifications Symbol Parameter APT1001R1BN APT1001R3BN UNIT VDSS Drain-Source Voltag...
Series: | POWER MOS 7® | Manufacturer: | Microsemi Power Products Group |
FET Type: | MOSFET N-Channel, Metal Oxide | FET Feature: | Standard |
Drain to Source Voltage (Vdss): | 1200V (1.2kV) | Current - Continuous Drain (Id) @ 25° C: | 19A |
Rds On (Max) @ Id, Vgs: | 570 mOhm @ 9.5A, 10V | Interface Type : | Ethernet, I2C, SPI, UART, USB |
Vgs(th) (Max) @ Id: | 5V @ 2.5mA | Gate Charge (Qg) @ Vgs: | 185nC @ 10V |
Input Capacitance (Ciss) @ Vds: | 5155pF @ 25V | Power - Max: | 520W |
Mounting Type: | Chassis Mount | Package / Case: | SOT-227-4, miniBLOC |
Supplier Device Package: | ISOTOP? |
Symbol |
Parameter |
APT12057JFLL |
Units |
VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS |
Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25°C Linear Derating Factor Operating and Storage Junction Temperature Range Lead Temperature: 0.063" from Case for 10 Sec. Avalanche Current 1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 4 |
1200 19 76 ±30 ±40 520 4.17 -55 to 150 300 19 50 3000 |
Volts Amps Volts Watts W/°C °C Amps mJ |
Power MOS 7® APT12057JFLL is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.
Technical/Catalog Information | APT12057JFLL |
Vendor | Microsemi-PPG |
Category | Discrete Semiconductor Products |
Mounting Type | Chassis Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25° C | 19A |
Rds On (Max) @ Id, Vgs | 570 mOhm @ 9.5A, 10V |
Input Capacitance (Ciss) @ Vds | 5155pF @ 25V |
Power - Max | 520W |
Packaging | Tube |
Gate Charge (Qg) @ Vgs | 185nC @ 10V |
Package / Case | SOT-227 |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | APT12057JFLL APT12057JFLL |