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APT1201R6BVFRG

MOSFET N-CH 1200V 8A TO-247

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SeekIC No. : 003431665 Detail

APT1201R6BVFRG: MOSFET N-CH 1200V 8A TO-247

APT1201R6BVFRG Data Sheet

floor Price/Ceiling Price

US $ 10.27~10.27 / Piece | Get Latest Price
Part Number:
APT1201R6BVFRG
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~30
  • Unit Price
  • $10.27
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/10/17

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Product Details

Quick Details

Series: POWER MOS V® Manufacturer: Microsemi Power Products Group
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV)
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 8A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 4A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) @ Vgs: 230nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 3660pF @ 25V
Power - Max: 280W Mounting Type: Through Hole
Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 8A
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-247-3
Power - Max: 280W
Gate Charge (Qg) @ Vgs: 230nC @ 10V
Rds On (Max) @ Id, Vgs: 1.6 Ohm @ 4A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Manufacturer: Microsemi Power Products Group
Supplier Device Package: TO-247 [B]
Series: POWER MOS V®
Input Capacitance (Ciss) @ Vds: 3660pF @ 25V


Parameters:

Technical/Catalog InformationAPT1201R6BVFRG
VendorMicrosemi-PPG
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25° C8A
Rds On (Max) @ Id, Vgs1.6 Ohm @ 4A, 10V
Input Capacitance (Ciss) @ Vds 3660pF @ 25V
Power - Max280W
PackagingTube
Gate Charge (Qg) @ Vgs230nC @ 10V
Package / CaseTO-247
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names APT1201R6BVFRG
APT1201R6BVFRG



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