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APT1201R2BFLLG

MOSFET N-CH 1200V 12A TO-247

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SeekIC No. : 003430387 Detail

APT1201R2BFLLG: MOSFET N-CH 1200V 12A TO-247

APT1201R2BFLLG Data Sheet

floor Price/Ceiling Price

US $ 9.44~15.73 / Piece | Get Latest Price
Part Number:
APT1201R2BFLLG
Mfg:
Supply Ability:
5000

Price Break

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  • Unit Price
  • $15.73
  • $14.55
  • $12.39
  • $11.41
  • $10.82
  • $10.23
  • $9.91
  • $9.64
  • $9.44
  • Processing time
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Upload time: 2024/11/23

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Product Details

Quick Details

Series: POWER MOS 7® Manufacturer: Microsemi Power Products Group
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV)
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 12A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 1.25 Ohm @ 6A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 5V @ 1mA Gate Charge (Qg) @ Vgs: 100nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 2540pF @ 25V
Power - Max: 403W Mounting Type: Through Hole
Package / Case: TO-247-3 Supplier Device Package: TO-247 [B]    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 12A
Gate Charge (Qg) @ Vgs: 100nC @ 10V
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-247-3
Vgs(th) (Max) @ Id: 5V @ 1mA
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Manufacturer: Microsemi Power Products Group
Supplier Device Package: TO-247 [B]
Series: POWER MOS 7®
Power - Max: 403W
Input Capacitance (Ciss) @ Vds: 2540pF @ 25V
Rds On (Max) @ Id, Vgs: 1.25 Ohm @ 6A, 10V


Parameters:

Technical/Catalog InformationAPT1201R2BFLLG
VendorMicrosemi-PPG
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25° C12A
Rds On (Max) @ Id, Vgs1.2 Ohm @ 6A, 10V
Input Capacitance (Ciss) @ Vds 2540pF @ 25V
Power - Max403W
PackagingTube
Gate Charge (Qg) @ Vgs100nC @ 10V
Package / CaseTO-247
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names APT1201R2BFLLG
APT1201R2BFLLG



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