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APT11N80KC3G

MOSFET N-CH 800V 11A TO-220

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SeekIC No. : 003430386 Detail

APT11N80KC3G: MOSFET N-CH 800V 11A TO-220

APT11N80KC3G Data Sheet

floor Price/Ceiling Price

US $ 1.55~3.41 / Piece | Get Latest Price
Part Number:
APT11N80KC3G
Mfg:
Supply Ability:
5000

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  • Unit Price
  • $3.41
  • $3.04
  • $2.74
  • $2.5
  • $2.25
  • $2.02
  • $1.7
  • $1.62
  • $1.55
  • Processing time
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Upload time: 2024/11/23

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Product Details

Quick Details

Series: CoolMOS™ Manufacturer: Microsemi Power Products Group
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 800V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 11A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 450 mOhm @ 7.1A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 3.9V @ 680µA Gate Charge (Qg) @ Vgs: 60nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 1585pF @ 25V
Power - Max: 156W Mounting Type: Through Hole
Package / Case: TO-220-3 Supplier Device Package: TO-220 [K]    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 11A
Packaging: Tube
Mounting Type: Through Hole
Package / Case: TO-220-3
Gate Charge (Qg) @ Vgs: 60nC @ 10V
Drain to Source Voltage (Vdss): 800V
Manufacturer: Microsemi Power Products Group
Supplier Device Package: TO-220 [K]
Series: CoolMOS™
Rds On (Max) @ Id, Vgs: 450 mOhm @ 7.1A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 680µA
Input Capacitance (Ciss) @ Vds: 1585pF @ 25V
Power - Max: 156W


Parameters:

Technical/Catalog InformationAPT11N80KC3G
VendorMicrosemi-PPG
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)800V
Current - Continuous Drain (Id) @ 25° C11A
Rds On (Max) @ Id, Vgs450 mOhm @ 7.1A, 10V
Input Capacitance (Ciss) @ Vds 1585pF @ 25V
Power - Max156W
PackagingTube
Gate Charge (Qg) @ Vgs60nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names APT11N80KC3G
APT11N80KC3G
APT11N80KC3GMI ND
APT11N80KC3GMIND
APT11N80KC3GMI



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