Features: • Lower Input Capacitance • Increased Power Dissipation• Lower Miller Capacitance • Easier To Drive• Lower Gate Charge, Qg • Popular SOT-227 Package• FAST RECOVERY BODYSpecifications Symbol Parameter Rating Units VDS Drain-Source Volt...
APT11058JFLL: Features: • Lower Input Capacitance • Increased Power Dissipation• Lower Miller Capacitance • Easier To Drive• Lower Gate Charge, Qg • Popular SOT-227 PackageR...
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Features: SpecificationsDescription APT1001R1AN is a kind of N-channel enhancement mode high volt...
Features: Faster Switching 100% Avalanche Tested Lower Leakage PopularTO-3 PackageSpecificat...
Specifications Symbol Parameter APT1001R1BN APT1001R3BN UNIT VDSS Drain-Source Voltag...
Symbol | Parameter | Rating | Units |
VDS | Drain-Source Voltage | 1100 | Volts |
ID | Continuous Drain Current @ TC = 25°C | 18 | Amps |
IDM | Pulsed Drain Current 1 | 72 | |
VGS | Gate-Source Voltage | ±30 | Volts |
VGSM | ±40 | ||
PD | Total Power Dissipation @ TC=25 | 463 | Watts |
Linear Derating Factor | 3.70 | W/ | |
TJ,TSTG | Operating and Storage Junction Temperature Range | -55 to 150 | |
TL | Lead Temperature: 0.063" from Case for 10 Sec. | 300 | |
IAR | Avalanche Current 1 (Repetitive and Non-Repetitive) | 18 | Amps |
EAR | Repetitive Avalanche Energy 1 | 50 | mJ |
EAS | Single Pulse Avalanche Energy 4 | 2500 |
Power MOS 7® APT11058JFLL is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.