APT11058JFLL

Features: • Lower Input Capacitance • Increased Power Dissipation• Lower Miller Capacitance • Easier To Drive• Lower Gate Charge, Qg • Popular SOT-227 Package• FAST RECOVERY BODYSpecifications Symbol Parameter Rating Units VDS Drain-Source Volt...

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SeekIC No. : 004287112 Detail

APT11058JFLL: Features: • Lower Input Capacitance • Increased Power Dissipation• Lower Miller Capacitance • Easier To Drive• Lower Gate Charge, Qg • Popular SOT-227 PackageR...

floor Price/Ceiling Price

Part Number:
APT11058JFLL
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/7/15

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Product Details

Description



Features:

• Lower Input Capacitance
• Increased Power Dissipation
• Lower Miller Capacitance
• Easier To Drive
• Lower Gate Charge, Qg
• Popular SOT-227 Package
• FAST RECOVERY BODY



Specifications

Symbol Parameter Rating Units
VDS Drain-Source Voltage 1100 Volts
ID Continuous Drain Current @ TC = 25°C 18 Amps
IDM Pulsed Drain Current 1 72
VGS Gate-Source Voltage ±30 Volts
VGSM   ±40
PD Total Power Dissipation @ TC=25 463 Watts
Linear Derating Factor 3.70 W/
TJ,TSTG Operating and Storage Junction Temperature Range -55 to 150
TL Lead Temperature: 0.063" from Case for 10 Sec. 300
IAR Avalanche Current 1 (Repetitive and Non-Repetitive) 18 Amps
EAR Repetitive Avalanche Energy 1 50 mJ
EAS Single Pulse Avalanche Energy 4 2500



Description

Power MOS 7® APT11058JFLL  is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.




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