Features: • Fast Recovery Body Diode • 100% Avalanche Tested • Lower Leakage • Popular TO-247 Package • Faster SwitchingSpecifications Symbol Parameter APT10M19BFR UNIT VDSS Drain-Source Voltage 100 Volts ID Continuous Drain Current @ Tc = 25 ...
APT10M25BVFR: Features: • Fast Recovery Body Diode • 100% Avalanche Tested • Lower Leakage • Popular TO-247 Package • Faster SwitchingSpecifications Symbol Parameter AP...
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Features: SpecificationsDescription APT1001R1AN is a kind of N-channel enhancement mode high volt...
Features: Faster Switching 100% Avalanche Tested Lower Leakage PopularTO-3 PackageSpecificat...
Specifications Symbol Parameter APT1001R1BN APT1001R3BN UNIT VDSS Drain-Source Voltag...
• Fast Recovery Body Diode
• 100% Avalanche Tested
• Lower Leakage
• Popular TO-247 Package
• Faster Switching
Symbol | Parameter | APT10M19BFR | UNIT |
VDSS | Drain-Source Voltage | 100 | Volts |
ID | Continuous Drain Current @ Tc = 25 °C |
75 | Amps |
IDM | Pulsed Drain Current |
300 | |
VGS | Gate-Source Voltage Continuous | ±30 | Volts |
VGSM | Gate-Source Voltage Transient | ±40 | |
PD | Total Power Dissipation @ TC = 25 | 300 | Watts |
Linear Derati | 2.4 | W/°C | |
TJ,TSTG | Operating and Storage Junction Temperature Range | -55to 150 | °C |
TL | Lead Temperature: 0.063" from Case for 10 Sec. | 300 | |
IAR | Avalanche Current (Repetitive and Non-Repetitive) |
75 | Amps |
EAR | Repetitive Avalanche Energy | 30 | mJ |
EAS | Single Pulse Avalanche Energy | 1500 |