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APT10M25BVFR

Features: • Fast Recovery Body Diode • 100% Avalanche Tested • Lower Leakage • Popular TO-247 Package • Faster SwitchingSpecifications Symbol Parameter APT10M19BFR UNIT VDSS Drain-Source Voltage 100 Volts ID Continuous Drain Current @ Tc = 25 ...

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SeekIC No. : 004287105 Detail

APT10M25BVFR: Features: • Fast Recovery Body Diode • 100% Avalanche Tested • Lower Leakage • Popular TO-247 Package • Faster SwitchingSpecifications Symbol Parameter AP...

APT10M25BVFR Data Sheet

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Part Number:
APT10M25BVFR
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/8/14

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Product Details

Description



Features:

• Fast Recovery Body Diode

• 100% Avalanche Tested

• Lower Leakage

• Popular TO-247 Package

• Faster Switching




Specifications

Symbol Parameter APT10M19BFR UNIT
VDSS Drain-Source Voltage 100 Volts
ID
Continuous Drain Current @ Tc = 25 °C
 75 Amps
IDM
Pulsed Drain Current 		300
VGS Gate-Source Voltage Continuous ±30 Volts
VGSM Gate-Source Voltage Transient ±40
PD Total Power Dissipation @ TC = 25 300 Watts
Linear Derati 2.4 W/°C
TJ,TSTG Operating and Storage Junction Temperature Range -55to 150 °C
TL Lead Temperature: 0.063" from Case for 10 Sec. 300
IAR
Avalanche Current (Repetitive and Non-Repetitive)		 75 Amps
EAR Repetitive Avalanche Energy 30 mJ
EAS Single Pulse Avalanche Energy 1500



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