APT10M19BVRG

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Packaging: Tube
Mounting Type: Through Hole
Gate Charge (Qg) @ Vgs: 300nC @ 10V
Package / Case: TO-247-3
Power - Max: 370W
Vgs(th) (Max) @ Id: 4V @ 1mA
Current - Continuous Drain (Id) @ 25° C: 75A
Manufacturer: Microsemi Power Products Group
Supplier Device Package: TO-247 [B]
Series: POWER MOS V®
Rds On (Max) @ Id, Vgs: 19 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds: 6120pF @ 25V


Parameters:

Technical/Catalog Information	APT10M19BVRG
Vendor	Microsemi-PPG
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25° C	75A
Rds On (Max) @ Id, Vgs	19 mOhm @ 500mA, 10V
Input Capacitance (Ciss) @ Vds	6120pF @ 25V
Power - Max	370W
Packaging	Tube
Gate Charge (Qg) @ Vgs	300nC @ 10V
Package / Case	TO-247
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	APT10M19BVRG APT10M19BVRG