APT10M19BVFR Selling Leads, Price trend, APT10M19BVFR DataSheet download, circuit diagram from SeekIC.com

Features: • Fast Recovery Body Diode • 100% Avalanche Tested • Lower Leakage • Popular TO-247 Package • Faster SwitchingSpecifications Symbol Parameter APT10M19BVFR UNIT VDSS Drain-Source Voltage 100 Volts ID Continuous Drain Current @ Tc = 25...

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SeekIC No. : 004287102 Detail

APT10M19BVFR: Features: • Fast Recovery Body Diode • 100% Avalanche Tested • Lower Leakage • Popular TO-247 Package • Faster SwitchingSpecifications Symbol Parameter AP...

APT10M19BVFR Data Sheet

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Part Number:: APT10M19BVFR
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/7/15

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Product Details

Description

Features:

• Fast Recovery Body Diode

• 100% Avalanche Tested

• Lower Leakage

• Popular TO-247 Package

• Faster Switching

Specifications

Symbol	Parameter	APT10M19BVFR	UNIT
V_DSS	Drain-Source Voltage	100	Volts
I_D	Continuous Drain Current @ T_c = 25 °C	75	Amps
I_DM	Pulsed Drain Current	300	Amps
V_GS	Gate-Source Voltage Continuous	±30	Volts
V_GSM	Gate-Source Voltage Transient	±40	Volts
P_D	Total Power Dissipation @ T_C = 25	370	Watts
P_D	Linear Derati	2.96	W/°C
T_J,T_STG	Operating and Storage Junction Temperature Range	-55to 150	°C
T_L	Lead Temperature: 0.063" from Case for 10 Sec.	300	°C
I_AR	Avalanche Current (Repetitive and Non-Repetitive)	75	Amps
E_AR	Repetitive Avalanche Energy	30	mJ
E_AS	Single Pulse Avalanche Energy	1500	mJ

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APT10M19BVFR

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