Features: • Identical Specifications: T-MAX™ or TO-264 Package • Lower Leakage • Faster Switching • Fast Recovery Body Diode • 100% Avalanche TestedSpecifications Symbol Parameter APT10M09B2VFR UNIT VDSS Drain-Source Voltage 100 Volts ID ...
APT10M09B2VFR: Features: • Identical Specifications: T-MAX™ or TO-264 Package • Lower Leakage • Faster Switching • Fast Recovery Body Diode • 100% Avalanche TestedSpecific...
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Features: SpecificationsDescription APT1001R1AN is a kind of N-channel enhancement mode high volt...
Features: Faster Switching 100% Avalanche Tested Lower Leakage PopularTO-3 PackageSpecificat...
Specifications Symbol Parameter APT1001R1BN APT1001R3BN UNIT VDSS Drain-Source Voltag...
• Identical Specifications: T-MAX™ or TO-264 Package
• Lower Leakage
• Faster Switching
• Fast Recovery Body Diode
• 100% Avalanche Tested
Symbol | Parameter | APT10M09B2VFR | UNIT |
VDSS | Drain-Source Voltage | 100 | Volts |
ID | Continuous Drain Current @ Tc = 25 °C |
100 | Amps |
IDM | Pulsed Drain Current |
400 | |
VGS | Gate-Source Voltage Continuous | ±30 | Volts |
VGSM | Gate-Source Voltage Transient | ±40 | |
PD | Total Power Dissipation @ TC = 25 | 625 | Watts |
Linear Derati | 9.0 | W/°C | |
TJ,TSTG | Operating and Storage Junction Temperature Range | -55to 150 | °C |
TL | Lead Temperature: 0.063" from Case for 10 Sec. | 300 | |
IAR | Avalanche Current (Repetitive and Non-Repetitive) |
100 | Amps |
EAR | Repetitive Avalanche Energy | 50 | mJ |
EAS | Single Pulse Avalanche Energy | 3000 |