APT10M09B2VFR Selling Leads, Price trend, APT10M09B2VFR DataSheet download, circuit diagram from SeekIC.com

Features: • Identical Specifications: T-MAX™ or TO-264 Package • Lower Leakage • Faster Switching • Fast Recovery Body Diode • 100% Avalanche TestedSpecifications Symbol Parameter APT10M09B2VFR UNIT VDSS Drain-Source Voltage 100 Volts ID ...

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SeekIC No. : 004287095 Detail

APT10M09B2VFR: Features: • Identical Specifications: T-MAX™ or TO-264 Package • Lower Leakage • Faster Switching • Fast Recovery Body Diode • 100% Avalanche TestedSpecific...

APT10M09B2VFR Data Sheet

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Part Number:: APT10M09B2VFR
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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268 Transactions

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Upload time: 2024/8/14

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Recent History
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Product Details

Description

Features:

• Identical Specifications: T-MAX™ or TO-264 Package

• Lower Leakage

• Faster Switching

• Fast Recovery Body Diode

• 100% Avalanche Tested

Specifications

Symbol	Parameter	APT10M09B2VFR	UNIT
V_DSS	Drain-Source Voltage	100	Volts
I_D	Continuous Drain Current @ T_c = 25 °C	100	Amps
I_DM	Pulsed Drain Current	400	Amps
V_GS	Gate-Source Voltage Continuous	±30	Volts
V_GSM	Gate-Source Voltage Transient	±40	Volts
P_D	Total Power Dissipation @ T_C = 25	625	Watts
P_D	Linear Derati	9.0	W/°C
T_J,T_STG	Operating and Storage Junction Temperature Range	-55to 150	°C
T_L	Lead Temperature: 0.063" from Case for 10 Sec.	300	°C
I_AR	Avalanche Current (Repetitive and Non-Repetitive)	100	Amps
E_AR	Repetitive Avalanche Energy	50	mJ
E_AS	Single Pulse Avalanche Energy	3000	mJ

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APT10M09B2VFR

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