IGBT 1200V 123A 570W SOT227
APT100GT120JRDL: IGBT 1200V 123A 570W SOT227
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Features: SpecificationsDescription APT1001R1AN is a kind of N-channel enhancement mode high volt...
Features: Faster Switching 100% Avalanche Tested Lower Leakage PopularTO-3 PackageSpecificat...
Specifications Symbol Parameter APT1001R1BN APT1001R3BN UNIT VDSS Drain-Source Voltag...
Series: | - | Manufacturer: | Microsemi Power Products Group |
IGBT Type: | NPT | Configuration: | Single |
Voltage - Collector Emitter Breakdown (Max): | 1200V | Vce(on) (Max) @ Vge, Ic: | 3.7V @ 15V, 100A |
Current - Collector (Ic) (Max): | 123A | Current - Collector Cutoff (Max): | 300µA |
Input Capacitance (Cies) @ Vce: | 6.7nF @ 25V | Maximum Operating Temperature : | + 245 C |
Power - Max: | 570W | Input: | Standard |
NTC Thermistor: | No | Mounting Type: | Chassis Mount |
Package / Case: | ISOTOP |
Technical/Catalog Information | APT100GT120JRDL |
Vendor | Microsemi-PPG |
Category | Discrete Semiconductor Products |
Input Type | Standard |
Voltage - Collector Emitter Breakdown (Max) | 1200V |
Current - Collector (Ic) (Max) | 123A |
Vce(on) (Max) @ Vge, Ic | 3.7V @ 15V, 100A |
Power - Max | 570W |
Mounting Type | Chassis Mount |
Package / Case | ISOTOP |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | APT100GT120JRDL APT100GT120JRDL APT100GT120JRDLMI ND APT100GT120JRDLMIND APT100GT120JRDLMI |