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APT100GN60B2

Features: • 600V Field Stop• Trench Gate: Low VCE(on)• Easy Paralleling• 6s Short Circuit Capability• Intergrated Gate Resistor: Low EMI, High ReliabilityApplicationWelding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPSSpecifications Symbol Paramet...

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SeekIC No. : 004287091 Detail

APT100GN60B2: Features: • 600V Field Stop• Trench Gate: Low VCE(on)• Easy Paralleling• 6s Short Circuit Capability• Intergrated Gate Resistor: Low EMI, High ReliabilityApplicationWel...

APT100GN60B2 Data Sheet

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Part Number:
APT100GN60B2
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/10/17

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Product Details

Description



Features:

• 600V Field Stop
• Trench Gate: Low VCE(on)
• Easy Paralleling
• 6s Short Circuit Capability
• Intergrated Gate Resistor: Low EMI, High Reliability


Application

Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS


Specifications

Symbol Parameter Value Unit
VCES Collector-Emitter Voltage 600 Volts
VGE Gate-Emitter Voltage ± 30 Volts
IC Continuous Collector Current @ TC = 25°C 229 Amps
IC Continuous Collector Current @ TC = 110°C 135 Amps
ICM Pulsed Collector Current 1 300 Amps
SSOA Switching Safe Operating Area @ TJ = 150°C 300A @ 600V  
PD Total Power Dissipation 625 Watts
TL Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. 300 °C
Tj
Tstg		 Operating and Storage Junction Temperature Range -55 to 175 °C



Description

Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's APT100GN60B2  have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplifies gate drive design and minimizes losses.




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